Methods of forming sensor integrated packages and structures formed thereby

Patent metadata

Field	Value
Publication number	US-9505607-B2
Application number	US-201514671549-A
Country	US
Kind code	B2
Filing date	Mar 27, 2015
Priority date	Mar 27, 2015
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

Methods of forming sensor integrated package devices and structures formed thereby are described. An embodiment includes providing a substrate core, wherein a first conductive trace structure and a second conductive trace structure are disposed on the substrate core, forming a cavity between the first conductive trace structure and the second conductive trace structure, and placing a magnet on a resist material disposed on a portion of each of the first and second conductive trace structures, wherein the resist material does not extend over the cavity.

First claim

What is claimed is:

1. A microelectronic sensor integrated package structure comprising:
a package substrate comprising a dielectric material;
a first conductive trace and a second conductive trace disposed directly on the dielectric material, wherein the first conductive trace is located in a first metal layer of the dielectric material and the second conductive trace is located in a second metal layer of the dielectric material;
a resist material disposed directly on a portion of the first conductive trace;
a magnet disposed directly on at least a portion of the resist material; and
a cavity disposed between the magnet and the first trace, wherein the resist material does not extend across the cavity, and wherein the magnet is directly adjacent the cavity.

2. The structure of claim 1 wherein the magnet provides a hermetic seal of the cavity.

3. The structure of claim 1 wherein the first and second conductive traces are coupled to anchor structures of at least one of a gyroscope or an accelerometer.

4. The structure of claim 1 further comprising wherein the first metal layer comprises at least one sensor component.

5. The structure of claim 4 wherein the at least one sensor component is selected from the group consisting of a proof mass, a coil and a beam.

6. The structure of claim 1 further comprising wherein the cavity comprises a sensor cavity, and wherein the magnet comprises a field strength capable of operating a sensor device coupled with the sensor integrated package at a power input below about 100 microwatts.

7. The structure of claim 1 further comprising wherein the magnet comprises a thickness of below about 1 mm.

8. A microelectronic device structure comprising:
a board;
a package structure coupled to the board, wherein the package structure comprises:
a dielectric material;
a first and a second conductive trace disposed on the dielectric material, wherein the first conductive trace is located in a first metal layer of the dielectric material and the second conductive trace is located in a second metal layer of the dielectric material;
a resist material disposed directly on a portion of the first conductive trace;
a magnet disposed directly on at least a portion of the resist material; and
a cavity disposed between the magnet and the first trace, wherein the resist material does not extend across the cavity, and wherein the magnet is directly adjacent the cavity.

9. The structure of claim 8 further comprising wherein the device structure comprises a portion of a sensor integrated package.

10. The structure of claim 9 further comprising wherein the sensor integrated package comprises at least one of a gyroscope or an accelerometer.

11. The structure of claim 8 wherein at least one of the first and second conductive trace structures are coupled to an anchor structure of a sensor device.

12. The structure of claim 8 wherein the magnet comprises a Z height of less than about 1 mm.

13. The structure of claim 8 further comprising a system comprising:
a communication chip communicatively coupled to the microelectronic structure; and
a DRAM communicatively coupled to the communication chip.

14. The structure of claim 8 further comprising wherein the first and second conductive trace structures are coupled with a beam structure of a sensor device.

15. The structure of claim 14 further comprising wherein the magnet is capable of providing a magnetic field to generate an electromagnetically induced deflection of the beam.

16. A method of forming a microelectronic package structure, comprising:
providing a substrate core comprising a dielectric material, wherein a first and a second conductive trace structure are disposed on the dielectric material;
forming a resist material directly on at least a portion of the first conductive trace structures;
forming a cavity directly adjacent the first conductive trace structure; and
placing at least one magnet directly on at least a portion of the resist material, wherein the at least one magnet is disposed directly adjacent the cavity and the resist material is not disposed across the cavity.

17. The method of claim 16 further comprising wherein the microelectronic package structure comprises a portion of a sensor integrated package.

18. The method of claim 17 further comprising wherein at least one of the first or the second conductive trace structures are coupled with a beam structure of a sensor device that is coupled with the sensor integrated package.

19. The method of claim 18 further comprising wherein the at least one magnet is capable of providing a magnetic field to generate an electromagnetically induced deflection of the beam.

20. The method of claim 16 further comprising wherein the cavity is formed after the resist is formed on the portion of the first conductive trace structure.

21. The method of claim 16 wherein placing the at least one magnet further comprises:
forming a plurality of magnets in a dielectric layer to form a reconfigured magnet structure; and
placing the reconfigured magnet structure directly on the resist material.

22. The method of claim 16 further comprising wherein the at least one magnet comprises a Z height of less than about 1 mm.

Assignees

• Intel Corp

Inventors

• Lee Kyu Oh
• Zhou Zheng
• Salama Islam A
• Eid Feras
• Oster Sasha N
• Kong Lay Wai
• Soto Gonzalez Javier

Classifications

• G01P15/0802

  Details · CPC title

• B81B3/0091 Primary

  Magnetic properties, e.g. guiding magnetic flux · CPC title

• B81B2201/0242

  Gyroscopes · CPC title

• B81C2203/0109

  Bonding an individual cap on the substrate · CPC title

• G01P15/097

  by vibratory elements · CPC title