Electrochemical plating methods

Patent metadata

Field	Value
Publication number	US-9496145-B2
Application number	US-201414219940-A
Country	US
Kind code	B2
Filing date	Mar 19, 2014
Priority date	Mar 19, 2014
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles.

First claim

The invention claimed is:

1. An electrochemical process, comprising:
placing a substrate having a cobalt seed layer into contact with an electrochemical plating bath containing cobalt salts, with the plating bath having pH of greater than 5 and up to 9;
conducting electric current through the bath to reduce cobalt ions in the plating bath and deposit a conformal film of cobalt onto the cobalt seed layer; and
annealing the substrate at a temperature of 200 to 450 C.

2. The method of claim 1 with the bath containing glycine.

3. The method of claim 1 with the plating bath having a pH of 6.5 to 8.3.

4. The method of claim 1 with the electric current ranging from 1-50 milli-ampere per square cm.

5. The method of claim 1 wherein the annealing is performed in an environment of H2/He, N2/H2, a reducing gas, pure hydrogen, or ammonia.

6. The method of claim 1 wherein the plating bath has a pH of 6.0 to 9.0.

7. The method of claim 1 wherein the cobalt is deposited into sub-micron features on the seed layer and the annealing causes the conformal film to fill the features without seam line defects.

8. The method of claim 1 with the seed layer on a barrier layer on the substrate.

9. The method of claim 1 with the substrate having no barrier layer.

10. The method of claim 1 wherein the plating bath does not substantially corrode or etch the seed layer.

11. The method of claim 1 further including repeating the steps at least once to provide a multi-step multi-cycle electrochemical deposition and anneal process.

12. The method of claim 11 further including plating, and drying annealing the substrate through at least two cycles.

Assignees

• Applied Materials Inc

Inventors

• Lam John W
• Emesh Ismail
• Shaviv Roey

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/059

  by reflowing or applying pressure · CPC title