Peltier module for laser diode

Patent metadata

Field	Value
Publication number	US-9490412-B2
Application number	US-201314427475-A
Country	US
Kind code	B2
Filing date	Sep 12, 2013
Priority date	Sep 12, 2012
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A Peltier module for laser diode that can be mounted with high melting point solder is provided. A Peltier module for laser diode includes: a heat dissipation-side substrate; a heat dissipation-side electrode; a p-type thermoelectric conversion element and an n-type thermoelectric conversion element; a solder joint layer; and Ni-containing layers. The solder joint layer is disposed between the heat dissipation-side electrode and each of the p-type and n-type thermoelectric conversion elements, and includes Ni intermetallic compound containing Au and Sn, Au 5 Sn intermetallic compound, and a eutectic composition including Au 5 Sn intermetallic compound and AuSn intermetallic compound. The Ni-containing layer is disposed between the solder joint layer and the heat dissipation-side electrode and between the solder joint layer and each of the p-type and n-type thermoelectric conversion elements. The solder joint layer has a eutectic ratio of 15.1% or less.

First claim

The invention claimed is:

1. A Peltier module for laser diode, comprising a thermoelectric conversion module for performing conversion between heat and electricity, p-type BiTe-based thermoelectric conversion elements and n-type BiTe-based thermoelectric conversion elements each having an upper surface and a lower surface, Ni-containing layers being formed on each of said upper surface and said lower surface, electrodes being formed on an insulation support substrate that is disposed above and below each of said p-type and n-type BiTe-based thermoelectric conversion elements, said electrode having a surface on which Ni-containing layers are formed, each of said p-type and n-type BiTe-based thermoelectric conversion elements and said electrode being electrically and thermally joined by a solder joint layer, said solder joint layer including: Ni intermetallic compound containing Au and Sn; Au 5 Sn intermetallic compound; and eutectic layers including both Au 5 Sn intermetallic compound and AuSn intermetallic compound that are adjacent to the Ni-containing layer in each of said p-type and n-type BiTe-based thermoelectric conversion elements and said electrode, and said solder joint layer having a eutectic ratio of 15.1% or less.

2. The Peltier module for laser diode according to claim 1 , wherein the eutectic ratio of said solder joint layer is 10.1% or less.

3. The Peltier module for laser diode according to claim 1 , wherein said solder joint layer has shear strength of 1.5 N/mm 2 or more.

4. The Peltier module for laser diode according to claim 1 , wherein said solder joint layer contains Pd.

5. The Peltier module for laser diode according to claim 1 , further comprising wire bonding pads (electrode) electrically connected to said electrode.

6. The Peltier module for laser diode according to claim 1 , further comprising lead wires electrically connected to said electrode.

7. The Peltier module for laser diode according to claim 1 , further comprising a metal post electrically connected to said electrode.

Assignees

• Kelk Ltd

Inventors

• Terauchi Kousuke
• Yamanashi Masataka
• Ishikawa Hideyuki
• Konishi Akio

Classifications

• H01L35/08 Primary

  Electricity · mapped topic

• H01S5/02415 Primary

  by using a thermo-electric cooler [TEC], e.g. Peltier element · CPC title

• H01L35/16

  Electricity · mapped topic

• H01L35/32

  Electricity · mapped topic

• H10N10/817 Primary

  the junction being non-separable, e.g. being cemented, sintered or soldered · CPC title