Methods of forming under device interconnect structures

US9490201B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9490201-B2
Application numberUS-201313798575-A
CountryUS
Kind codeB2
Filing dateMar 13, 2013
Priority dateMar 13, 2013
Publication dateNov 8, 2016
Grant dateNov 8, 2016

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Abstract

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Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate.

First claim

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What is claimed is: 1. A method of forming a structure comprising: forming at least one routing layer in a first substrate having a first bonding layer comprising a first semiconductor material wherein the first substrate does not include a device layer; forming a device layer in a second substrate having a second bonding layer comprising a second semiconductor material; and coupling the first substrate with the second substrate, wherein the first semiconductor material of the…

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What does patent US9490201B2 cover?
Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate.
Who is the assignee on this patent?
Intel Corp
What technology area does this patent fall under?
Primary CPC classification H10P90/1914. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).