Method for fabricating three-dimensional semiconductor device using buried stop layer in substrate
US-2024268119-A1 · Aug 8, 2024 · US
US9490201B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9490201-B2 |
| Application number | US-201313798575-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2013 |
| Priority date | Mar 13, 2013 |
| Publication date | Nov 8, 2016 |
| Grant date | Nov 8, 2016 |
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Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate.
Opening claim text (preview).
What is claimed is: 1. A method of forming a structure comprising: forming at least one routing layer in a first substrate having a first bonding layer comprising a first semiconductor material wherein the first substrate does not include a device layer; forming a device layer in a second substrate having a second bonding layer comprising a second semiconductor material; and coupling the first substrate with the second substrate, wherein the first semiconductor material of the…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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