Magnetic memory element and magnetic memory device
US-9196333-B2 · Nov 24, 2015 · US
US9484531B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9484531-B2 |
| Application number | US-201514744137-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 19, 2015 |
| Priority date | Mar 26, 2015 |
| Publication date | Nov 1, 2016 |
| Grant date | Nov 1, 2016 |
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A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
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What is claimed is: 1. A method of making a magnetic material, the method comprising: forming a cobalt layer on a first iron layer; and forming a second iron layer on the cobalt layer; and forming an iron-rich dusting layer and a tunnel barrier layer on the first or second iron layers, the tunnel barrier layer formed on the iron-rich dusting layer; wherein the first and second iron layers comprise iron and are BCC, the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a PMA. 2. The method of claim 1 , wherein the tunnel barrier layer comprises magnesium oxide.
containing cobalt ({H01F10/126} , H01F10/13 take precedence) · CPC title
for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title
containing iron or nickel ({H01F10/126} , H01F10/13, H01F10/16 take precedence) · CPC title
Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title
the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title
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