Plasma activated conformal dielectric film deposition

US8999859B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8999859-B2
Application numberUS-201314133239-A
CountryUS
Kind codeB2
Filing dateDec 18, 2013
Priority dateApr 15, 2010
Publication dateApr 7, 2015
Grant dateApr 7, 2015

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Abstract

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Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

First claim

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The invention claimed is: 1. An apparatus for depositing a doped film on a substrate surface, the apparatus comprising: a reaction chamber comprising a device for holding the substrate during deposition of the doped film; one or more process gas inlets coupled to the reaction chamber; and a controller designed or configured to operate the apparatus to perform the following operations: (a) introducing a first reactant into the reaction chamber under conditions allowing the fir…

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What does patent US8999859B2 cover?
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Who is the assignee on this patent?
Novellus Systems Inc
What technology area does this patent fall under?
Primary CPC classification H10P14/6903. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).