Method for determining operation coniditions for a selected lifetime of a semiconductor device
US-2016266819-A1 · Sep 15, 2016 · US
US9448277B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9448277-B2 |
| Application number | US-201213544080-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 9, 2012 |
| Priority date | Jun 22, 2012 |
| Publication date | Sep 20, 2016 |
| Grant date | Sep 20, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Systems for reliability testing include a picometer configured to measure a leakage current across a device under test (DUT); a camera configured to measure optical emissions from the DUT based on a timing of the measurement of the leakage current; and a test system configured to apply a stress voltage to the DUT and to correlate the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions.
Opening claim text (preview).
What is claimed is: 1. A system for reliability testing, comprising: a picometer configured to measure a leakage current across a device under test (DUT); a camera configured to measure optical emissions from the DUT based on a timing of the measurement of the leakage current; and a test system configured to apply a stress voltage to the DUT and to correlate the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions. 2. The system of claim 1 , wherein the test system is configured to convolve a vector formed from electrical measurements with a vector formed from optical measurements. 3. The system of claim 2 , wherein the test system is configured to calculate the maximum value of the convolution as Corr = max ( ∑ j E ( j ) I ( k + 1 - j ) ) , where k=1, . . . , m+n−1, m is a number of electrical measurements, n is a number of optical measurements, E is the optical measurement vector, and I is the electrical measurement vector. 4. The system of claim 1 , wherein the test system is further configured to halt said stress, electrical measurement, and optical measurement, based on said correlation. 5. The system of claim 1 , wherein picometer is further configured to periodically repeat the electrical measurement. 6. The system of claim 1 , wherein the test system is further configured to segment an image of the DUT and determine a maximum emission intensity for each segment to localize emissions. 7. A system for reliability testing, comprising: a picometer configured to periodically measure a leakage current across a device under test (DUT) to form an electrical measurement vector; a camera configured to measure optical emissions from the DUT based on a timing of the measurement of the leakage current; and a test system configured to apply a stress voltage to the DUT, to segment an image of the DUT and determine a maximum emission intensity for each segment to localize emissions and form an optical emission measurement vector, to convolve the electrical measurement vector with the optical emission measurement vector to form a convolved vector, and to determine a maximum value in the convolved vector to correlate the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT.
of integrated circuits {(G01R31/31728 takes precedence)} · CPC title
Environmental, reliability or burn-in testing · CPC title
Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection · CPC title
related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads · CPC title
Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing (G01R31/2818 takes precedence) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.