Method for temperature compensation in MEMS resonators with isolated regions of distinct material

Patent metadata

Field	Value
Publication number	US-9422157-B2
Application number	US-201313901258-A
Country	US
Kind code	B2
Filing date	May 23, 2013
Priority date	Mar 9, 2007
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

Methods of forming MEMS resonators containing a first structural material and a second structural material to tailor the resonator's temperature coefficient of frequency (TCF). The first structural material has a different Young's modulus temperature coefficient than the second structural material. In one embodiment, the first structural material may be formed on substrate and patterned, and the second structural material may be formed over the first structural material and planarized to expose the first structural material. A resonator may be patterned that contains both the first and second structural materials.

First claim

We claim:

1. A method of forming a MEMS resonator comprising:
forming a first structural material on a substrate;
patterning the first structural material;
forming over the first structural material, a second structural material having a different Young's modulus temperature coefficient than the first structural material;
planarizing the second structural material to expose the first structural material;
patterning a resonator containing both the first and second structural materials; and
anchoring the patterned resonator to an anchor, where the first structural material is confined to a region of the resonator having a longest dimension that is shorter than a distance between the anchor and a point of the resonator furthest from the anchor.

2. The method of claim 1 , wherein forming the first structural material comprises depositing an silicon dioxide and wherein forming the second structural material comprises depositing a polycrystalline silicon germanium alloy.

3. The method of claim 1 , wherein patterning the first structural material comprises patterning the first structural material to have a dimension required to compensate the temperature coefficient of frequency of the resonator.

4. The method of claim 1 , wherein forming the first and second structural materials further comprises depositing films at a temperature below 500° C.

5. The method of claim 1 , wherein forming the first structural material comprises depositing a polycrystalline silicon germanium alloy and wherein forming the second structural material comprises depositing silicon dioxide.

6. The method of claim 1 , wherein forming the first structural material comprises depositing silicon dioxide and wherein forming the second structural material comprises depositing a polycrystalline silicon germanium alloy.

7. The method of claim 1 , further comprising patterning the first structural material through lithography and etch to have a dimension required to compensate the temperature coefficient of frequency of the resonator.

8. The method of claim 1 , wherein planarizing the second structural material to expose the first structural material further comprises removing the second structural material from the top surface of the first structural material with chemical-mechanical polishing.

9. The method of claim 1 , where the first structural material has a positive Young's modulus temperature coefficient and where the second structural material has a negative Young's modulus temperature coefficient.

10. The method of claim 1 , where the first structural material is a dielectric and the second structural material is a semiconductor.

11. The method of claim 1 , where the top surface of the first structural material is planar with the top surface of the second structural material.

12. The method of claim 1 , where the resonator is a beam; and where the region of the resonator to which the first structural material is confined includes a point of maximum flexural stress within the resonator when the resonator is made to resonate.

13. The method of claim 1 , where the resonator is a beam; and where the region of the resonator to which the first structural material is confined includes a point of maximum stress within the resonator and excludes a point of maximum displacement when the resonator is made to resonate.

14. The method of claim 1 , where the resonator is a bulk mode resonator; and where the region of the resonator to which the first structural material is confined is an isolated block completely surrounded by the second structural material.

15. The method of claim 1 , where the first structural material stiffens the resonator region to which the first structural material is confined as a function of temperature to tune a temperature coefficient of frequency of the resonator in a manner at least partially decoupled from the resonator temperature coefficient.

16. The method of claim 1 , where an edge of the first structural material farthest from the anchor is disposed a first distance from the anchor, the first distance being less than a distance between the anchor and a point of maximum displacement during resonance.

17. The method of claim 1 ,
where the first structural material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator during operation.

18. The method of claim 1 ,
where the resonator is a bulk-mode resonator, and where the method further comprises patterning the first structural material in a radial array.

19. The method of claim 18 , further comprising patterning the first structural material in a radial array about the anchor.

20. The method of claim 18 , where the first structural material has a positive Young's modulus temperature coefficient and the second structural material has a negative Young's modulus temperature coefficient.

21. The method of claim 18 , where the top surface of the first structural material is planar with the top surface of the second structural material.

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Quevy Emmanuel P
• Bernstein David H

Classifications

• Y10T29/42

  Piezoelectric device making · CPC title

• B81C1/0069 Primary

  Thermal properties, e.g. improve thermal insulation · CPC title

• B81C1/00349

  Creating layers of material on a substrate · CPC title

• G02B6/358

  Latching of the moving element, i.e. maintaining or holding the moving element in place once operation has been performed; includes a mechanically bistable system · CPC title

• Y10T29/49165

  by forming conductive walled aperture in base · CPC title