Monolithic fabrication of thermally isolated microelectromechanical system (MEMS) devices

Patent metadata

Field	Value
Publication number	US-10131535-B2
Application number	US-201514806201-A
Country	US
Kind code	B2
Filing date	Jul 22, 2015
Priority date	May 22, 2015
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

First claim

What is claimed is:

1. A microelectromechanical (MEMS) structure, comprising:
a composite substrate including voids from etching away at least one sacrificial structure of a first material from a composite substrate including the at least one sacrificial structure of the first material and a second material, the composite substrate further including at least one site configured for coupling the MEMS structure to a package;
a device layer, attached to the composite substrate, the device layer including a MEMS device, wherein a thermal isolation stage, which is thermally isolated by at least one thermally isolating flexure formed of the second material, supports the MEMS device; and
at least one temperature sensing element on at least one of: the thermal isolation stage; and the MEMS device.

2. The MEMS structure of claim 1 , further including:
a plurality of bonds coupling the composite substrate to the package, wherein the at least one site configured for coupling the MEMS structure to the package includes:
a plurality of bump bonds coupled to a glass frame in the composite substrate.

3. The MEMS structure of claim 1 , wherein the composite substrate is a first composite substrate, the MEMS structure further including a second composite substrate disposed on the device layer, wherein the MEMS device on the thermal isolation stage is enclosed by the first composite substrate and the second composite substrate.

4. The MEMS structure of claim 1 , wherein the second material of the composite substrate comprises glass.

5. The MEMS structure of claim 1 , wherein the thermally isolating flexure comprises a layer of glass that connects the thermal isolation stage and a glass frame.

6. The MEMS structure of claim 5 , and further comprising metal lines, having a negligible thermal conductive cross section, deposited on the flexure to enable electrical connection of external circuits to the device layer.

7. The MEMS structure of claim 5 , and further comprising metal lines, having a negligible thermal conductive cross section, deposited on the flexure to enable electrical connection of external circuits to the at least one temperature sensing element.

8. The MEMS structure of claim 1 , wherein the device layer is formed directly on a surface of the composite substrate.

9. The MEMS structure of claim 1 , wherein the device layer is formed on raised areas on the composite substrate.

10. The MEMS structure of claim 1 , and further including at least one electrical feature formed on the composite substrate.

11. The MEMS structure of claim 10 , wherein the at least one electrical feature comprises the at least one temperature sensing element on the thermal isolation stage.

12. The MEMS structure of claim 11 , wherein the at least one temperature sensing element comprises a Wheatstone bridge.

13. The MEMS structure of claim 12 , wherein the at least one electrical feature includes a temperature controlling element.

14. The MEMS structure of claim 1 , wherein the MEMS device comprises at least one of a silicon MEMS inertial sensor, proof masses, interdigitated comb fingers, flexures and other electrodes.

15. The MEMS structure of claim 1 , wherein the thermally isolating flexure and the thermal isolation stage are formed in the composite substrate.

16. The MEMS structure of claim 1 , wherein the second material is a material with a melting point that is less than a melting point of the first material and with a thermal conductivity that is less than or on the order of magnitude of 1 W/m-K.

Assignees

• Honeywell Int Inc

Inventors

• Reinke John R
• Lodden Grant H

Classifications

• B81B7/0019 Primary

  Protection against thermal alteration or destruction (B81B7/0083 takes precedence) · CPC title

• B81B3/0081

  Thermal properties · CPC title

• B81B7/0087 Primary

  On-device systems and sensors for controlling, regulating or monitoring · CPC title

• B81B2201/0228

  Inertial sensors · CPC title

• H02N1/00

  Electrostatic generators or motors using a solid moving electrostatic charge carrier · CPC title