Dicing method

US9421640B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9421640-B2
Application numberUS-201414764962-A
CountryUS
Kind codeB2
Filing dateJan 21, 2014
Priority dateJan 31, 2013
Publication dateAug 23, 2016
Grant dateAug 23, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The method comprises providing a substrate like a semiconductor wafer ( 1 ), applying a laser cut ( 4 ) of the substrate, and subsequently applying a saw to divide the substrate from a main surface ( 10 ). The laser cut ( 4 ) may be used to cut along boundaries of saw streets ( 7 ).

First claim

Opening claim text (preview).

The invention claimed is: 1. A dicing method, comprising: providing a semiconductor wafer as a substrate; applying a saw to divide the substrate from a main surface; performing a laser cut of the substrate before the saw is applied; and directing the laser cut to a partial volume of the substrate opposite the main surface, the partial volume including a layer of integrated components. 2. The method of claim 1 , wherein the laser cut is directed to lateral boundaries of a saw street. 3. The method of claim 1 , wherein the laser cut allows the substrate to be divided with the saw not completely penetrating the substrate. 4. The method of claim 1 , wherein the partial volume amounts to more than 5% and less than 40% of the total volume of the substrate. 5. The method of claim 1 , wherein the partial volume amounts to more than 10% and less than 30% of the total volume of the substrate. 6. The method of claim 1 , wherein the substrate comprises glass or ceramics. 7. The method of claim 1 , wherein the substrate is provided for microelectromechanical systems. 8. A dicing method, comprising: providing a semiconductor wafer as a substrate having a main surface; forming integrated components in a partial volume of the substrate opposite the main surface; performing a laser cut from the main surface into the partial volume of the substrate; and applying a saw to divide the substrate from the main surface.

Assignees

Inventors

Classifications

  • Cutting or separating of wafers, substrates or parts of devices · CPC title

  • B28D5/022Primary

    by cutting with discs or wheels · CPC title

  • Scoring using a focussed radiation beam, e.g. laser · CPC title

  • Dry etching · CPC title

  • Electricity · mapped topic

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Frequently asked questions

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What does patent US9421640B2 cover?
The method comprises providing a substrate like a semiconductor wafer ( 1 ), applying a laser cut ( 4 ) of the substrate, and subsequently applying a saw to divide the substrate from a main surface ( 10 ). The laser cut ( 4 ) may be used to cut along boundaries of saw streets ( 7 ).
Who is the assignee on this patent?
Ams Ag
What technology area does this patent fall under?
Primary CPC classification B28D5/022. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Aug 23 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).