Temperature measuring method and plasma processing system

Patent metadata

Field	Value
Publication number	US-9412565-B2
Application number	US-201514609554-A
Country	US
Kind code	B2
Filing date	Jan 30, 2015
Priority date	Feb 4, 2014
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (T meas ) according to a measurement window temperature (T w ), the function (f) being computed based on the correction target temperature (T meas ) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (T obj ) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (T w ) corresponding to a temperature of the measurement window. The temperature measuring method further involves measuring the correction target temperature (T meas ), measuring the measurement window temperature (T w ), and correcting the correction target temperature (T meas ) according to the measurement window temperature (T w ) based on the obtained function (f).

First claim

What is claimed is:

1. A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus, the temperature measuring method comprising:
a function obtaining step of obtaining a function (f) for correcting a correction target temperature (T meas ) according to a measurement window temperature (T w ), the function (f) being computed based on the correction target temperature (T meas ) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (T obj ) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (T w ) corresponding to a temperature of the measurement window;
a first measuring step of measuring the correction target temperature (T meas );
a second measuring step of measuring the measurement window temperature (T w );
a correction step of correcting the correction target temperature (T meas ) measured in the first measuring step according to the measurement window temperature (T w ) measured in the second measuring step based on the obtained function (f), and
a step of repetitively measuring the correction tarp et temperature (T meas ) and the measurement window temperature (T w ), and repetitively correcting the measured correction target temperature (T meas ) using the function (f) and the measured measurement window temperature (T w ) until a corrected temperature (T meas ′) corresponding to a temperature of the measuring object corrected by the correction step reaches a target temperature corresponding to a temperature during processing or before/after processing of a previous plasma process performed on a previous lot by the plasma processing apparatus.

2. The temperature measuring method as claimed in claim 1 , wherein the member corresponding to the measuring object arranged within the chamber of the plasma processing apparatus is at least one of a focus ring, a ceiling member, and a liner.

3. The temperature measuring method as claimed in claim 1 , wherein the measurement window is made of at least one of yttria (Y 2 O 3 ), calcium fluoride (CaF 2 ), sapphire, quartz, silicon, and germanium.

4. The temperature measuring method as claimed in claim 1 , wherein the temperature of the measurement window is measured by a thermocouple attached to the measurement window.

Assignees

• Tokyo Electron Ltd

Inventors

• Yoshida Yusuke
• Son Ryou
• Senda Takahiro
• Kohno Masayuki
• Matsumoto Naoki

Classifications

• G01J5/064

  Ambient temperature sensor; Housing temperature sensor; Constructional details thereof · CPC title

• H01J37/32935

  Monitoring and controlling tubes by information coming from the object and/or discharge · CPC title

• G01J5/0044

  Furnaces, ovens, kilns (G01J5/0007, G01J5/004 take precedence) · CPC title

• G01J5/0007

  of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing · CPC title

• G01J2005/0048

  Physics · mapped topic