Method of manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-9385040-B2
Application number	US-201414183870-A
Country	US
Kind code	B2
Filing date	Feb 19, 2014
Priority date	Feb 19, 2014
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A method of manufacturing a semiconductor device includes providing a wafer, grinding a backside of the wafer, disposing a backside film on the backside of the wafer, cutting the wafer to singulate a plurality of dies from the wafer, and forming a mark on the backside film disposed on each of the plurality of dies by a laser operation.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
providing a wafer;
grinding a backside of the wafer;
disposing a backside film on the backside of the wafer;
cutting the wafer to singulate a plurality of dies from the wafer;
placing the plurality of dies into cavities of a carrier respectively;
picking out one of the plurality of dies from one of the cavities of the carrier, and placing the one of the plurality of dies at a marking platform; and
forming a mark on the backside film disposed on the one of the plurality of dies by a laser operation.

2. The method of claim 1 , wherein the forming the mark includes projecting a laser beam directly on the backside film.

3. The method of claim 1 , wherein the forming the mark includes loading the plurality of dies one by one to a predetermined position.

4. The method of claim 1 , wherein the forming the mark includes engraving the mark with a depth of about 0.001 um to about 50 um from the backside film.

5. The method of claim 1 , further comprising temporarily bonding the wafer on a first carrier by a dicing tape prior to the cutting the wafer.

6. The method of claim 1 , wherein the disposing the backside film includes disposing the backside film permanently on the backside of the wafer.

7. The method of claim 1 , wherein the backside film is a non-cured backside film.

8. The method of claim 1 , wherein the mark formed on the backside film is absent from a residue disposed on or adjacent to the mark.

9. The method of claim 1 , wherein the mark has a depth of less than about 10 um from the backside film.

10. The method of claim 1 , wherein the backside film has a surface roughness of less than about 5 um.

11. The method of claim 1 , wherein the backside film includes epoxy, polymer or polyimide.

12. A method of manufacturing a semiconductor device, comprising:
providing a wafer including a backside and a backside film disposed on the backside;
mounting the wafer on a first carrier by a dicing tape;
singulating a plurality of dies from the wafer disposed on the first carrier;
loading the plurality of dies one by one from the first carrier to cavities of a second carrier respectively;
transporting the second carrier carrying the plurality of dies;
loading the plurality of dies one by one from the cavities of the second carrier to a marking platform; and
laser engraving a mark on the backside film disposed on the backside of each of the plurality of dies on the marking platform.

13. The method of claim 12 , wherein the laser engraving the mark includes exposing the backside film to a laser beam with a wavelength of about 200 nm to about 600 nm.

14. The method of claim 12 , wherein the loading the plurality of dies from the first carrier to the second carrier further includes winding the second carrier carrying the plurality of dies on a reel.

15. The method of claim 12 , wherein the first carrier is a dicing ring or the second carrier is a carrier tape.

16. The method of claim 12 , further comprising inspecting the plurality of dies by an infra red (IR) after the laser engraving the mark on the backside film.

17. A method of manufacturing a semiconductor device, comprising:
providing a wafer including a backside;
disposing a backside film on the backside of the wafer;
curing the backside film;
sawing a plurality of dies from the wafer;
placing a first die of the plurality of dies into a first cavity of a carrier;
placing a second die of the plurality of dies into a second cavity of the carrier;
picking out the first die from the first cavity of the carrier and placing the first die on a laser marking platform;
laser marking on the backside film disposed on the first die;
unloading the first die from the laser marking platform;
picking out the second die from the second cavity of the carrier and placing the second die on the laser marking platform;
laser marking on the backside film disposed on the second die; and
unloading the second die from the laser marking platform.

18. The method of claim 17 , wherein the laser marking includes displacing a laser beam or the laser marking platform to form a mark on the backside film.

19. The method of claim 17 , wherein the laser marking includes heating a portion of the backside film corresponding to a mark to be formed on the backside film.

20. The method of claim 17 , wherein the wafer has a thickness of less than 250 um.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Tsai Tsai-Tsung
• Lu Wen-Hsiung
• Tsai Yu-Peng
• Lin Wei-Hung
• Cheng Ming-Da
• Liu Chung-Shi

Classifications

• H10W46/301

  for alignment · CPC title

• H10W46/607

  Located on parts of packages, e.g. on encapsulations or on package substrates · CPC title

• H10W46/401

  for identification or tracking · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title