High throughput heated ion implantation system and method

Patent metadata

Field	Value
Publication number	US-9378992-B2
Application number	US-201414317778-A
Country	US
Kind code	B2
Filing date	Jun 27, 2014
Priority date	Jun 27, 2014
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.

First claim

What is claimed is:

1. An ion implantation system, comprising:
an ion implantation apparatus configured to direct an ion beam toward a process chamber, wherein the process chamber has a vacuum environment associated therewith at a vacuum pressure;
a first dual load lock assembly and a second dual load lock assembly, wherein each of the first dual load lock assembly and second dual load lock assembly respectively comprises a first chamber and a second chamber, wherein respective internal volumes of each first and second chamber are generally isolated from one another and share a common wall therebetween, and wherein each of the first chamber and second chamber has a respective vacuum door and atmospheric door, wherein each respective vacuum door is configured to provide selective fluid communication between the respective first chamber or second chamber and the vacuum environment, and wherein each respective atmospheric door is configured to provide selective fluid communication between the respective first chamber or second chamber and an atmospheric environment having an atmospheric pressure associated therewith, and wherein each first chamber has a pre-heat apparatus associated therewith, wherein the pre-heat apparatus is configured to heat a workpiece disposed within the respective first chamber, and wherein each second chamber has a post-cool apparatus associated therewith, wherein the post-cool apparatus is configured to cool the workpiece disposed within the respective second chamber; and
a controller configured to activate each respective pre-heat apparatus to transmit heat energy to the respective workpiece at the atmospheric pressure, therein raising a temperature of the respective workpiece to a first predetermined temperature, and wherein the controller is further configured to activate each respective post-cool apparatus to cool the respective workpiece to a second predetermined temperature.

2. The ion implantation system of claim 1 , wherein the controller is further configured to activate the respective pre-heat apparatus to transmit heat energy to the respective workpiece at the vacuum pressure.

3. The ion implantation system of claim 1 , further comprising:
a thermal chuck configured to selectively retain the workpiece thereon within the process chamber, wherein the thermal chuck is further configured to heat the workpiece to a processing temperature that is greater than the first temperature, and wherein the thermal chuck retains the workpiece thereon concurrent with the ion beam impinging on the workpiece.

4. The ion implantation system of claim 3 , further comprising:
a pump in selective fluid communication with the first and second chambers of the respective first and second dual load lock assemblies;
a vent in selective fluid communication with the first and second chambers of the respective first and second dual load lock assemblies.

5. The ion implantation system of claim 4 , wherein the controller is further configured to heat the workpiece to the first temperature in the first chamber via the pre-heat apparatus, to heat the workpiece to the processing temperature in the processing chamber via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, to cool the workpiece to the second temperature in the second chamber via the post-cool apparatus, and to selectively transfer the workpiece between the atmospheric environment and the vacuum environment via control of the pump, vent, and the respective atmospheric doors and vacuum doors of the respective first dual load lock assembly and second dual load lock assembly.

6. The ion implantation system of claim 1 , wherein the pre-heat apparatus comprises a hot plate positioned within the first chamber of one or more of the first dual load lock assembly and second dual load lock assembly.

7. The ion implantation system of claim 1 , further comprising a thermal barrier positioned between the first and second chambers of the respective first dual load lock assembly and second dual load lock assembly, wherein the thermal barrier, wherein the thermal barrier generally defines the common wall between the first and second chambers.

8. The ion implantation system of claim 7 , wherein the thermal barrier comprises a plate having a first cooling channel passing therethrough, wherein a first cooling fluid passing through the first cooling channel substantially thermally isolates the first and second chambers from one another.

9. The ion implantation system of claim 8 , wherein the plate generally defines a cold plate configured to support the workpiece within the second chamber, and wherein the first cooling fluid passing through the first cooling channel substantially cools the workpiece to the second temperature.

10. The ion implantation system of claim 1 , wherein each of the first dual load lock assembly and second dual load lock assembly further comprise a lifting mechanism configured to selectively translate the workpiece with respect to the pre-heat apparatus.

11. The ion implantation system of claim 10 , wherein the pre-heat apparatus comprises a hot plate positioned within the first chamber of one or more of the first dual load lock assembly and second dual load lock assembly, and wherein the lifting mechanism is configured to selectively translate the workpiece to and from a surface of the pre-heat apparatus.

12. The ion implantation system of claim 11 , wherein the lifting mechanism comprises a plurality of lift pins selectively extending through the surface of the hot plate.

13. The ion implantation system of claim 10 , wherein the lifting mechanism comprises one or more supports configured to selectively engage a periphery of the workpiece.

14. The ion implantation system of claim 1 , wherein the pre-heat apparatus comprises a hot plate having gas cooling channels defined therein, wherein a gas provided within the gas cooling channels selectively cools the hot plate.

15. The ion implantation system of claim 1 , wherein the pre-heat apparatus comprises a generally hollow pan having a ceramic lid, wherein an Inconel alloy heating element residing within the pan is configured to selectively provide radiant energy to the ceramic lid, and wherein the workpiece is selectively heated when residing on a surface of the ceramic lid.

16. The ion implantation system of claim 15 , wherein the ceramic lid is comprised of silicon carbide.

17. The ion implantation system of claim 1 , wherein the pre-heat apparatus comprises a radiant heat source.

18. The ion implantation system of claim 17 , wherein the radiant heat source comprises one or more a halogen lamp, light emitting diode, and infra red thermal device.

19. The ion implantation system of claim 17 , wherein the first chamber of one or more of the first dual load lock assembly and second dual load lock assembly comprises a window, wherein the radiant heat source is disposed outside of the first chamber and wherein radiant heat source is configured to direct radiant energy through the window toward the workpiece disposed within the first chamber.

20. The ion implantation system of claim 1 , wherein the post-cool apparatus comprises a chilled workpiece support configured to actively cool a workpiece residing thereon via thermal conduction.

21. The ion implantation system of claim 1 , wherein the chilled workpiece support comprises a cold plate having a second cooling channel passing therethrough, wherein a second cooling fluid passing through the second cooling channe

Assignees

• Axcelis Tech Inc

Inventors

• Huseinovic Armin
• Ferrara Joseph
• Terry Brian

Classifications

• H10P72/3206

  the substrate being handled substantially vertically · CPC title

• H10P72/0471

  comprising at least one ion or electron beam chamber · CPC title

• H10P72/0452

  characterised by the layout of the process chambers · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0434

  mainly by convection · CPC title