Thin film transistor and method of manufacturing the same, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-9368738-B2
Application number	US-201213472247-A
Country	US
Kind code	B2
Filing date	May 15, 2012
Priority date	Jun 13, 2011
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A thin film transistor includes: an organic semiconductor layer which is formed from a metal-containing material containing at least one of a metallic element and a semi-metallic element capable of reacting with an etching gas; a source electrode and a drain electrode spaced apart from each other; and an organic conductive layer which is inserted between the organic semiconductor layer and the source and drain electrodes in the regions where the organic semiconductor layer overlaps with the source and drain electrodes and which is formed from a non-metal-containing material not containing at least one of a metallic element and a semi-metallic element capable of reacting with the etching gas.

First claim

The invention is claimed as follows:

1. A thin film transistor comprising:
an organic semiconductor layer including at least one of a metallic element and a semi-metallic element capable of reacting with an etching gas;
an organic conductive layer disposed on portions of a surface of the organic semiconductor layer, wherein the organic conductive layer does not contain the at least one of the metallic element and the semi-metallic element capable of reacting with the etching gas;
a source electrode disposed on a first portion of the organic conductive layer;
a drain electrode disposed on a second portion of the organic conductive layer,
wherein,
the first and second portions of the organic conductive layer are spaced apart from each other forming a void area between the spaced apart first and second portions of the organic conductive layer,
the source electrode and the drain electrode are spaced apart from each other, and
the organic conductive layer is sandwiched between the organic semiconductor layer and the source and drain electrodes; and

an etching stopper layer,
wherein,
the etching stopper layer is disposed on portions of the organic semiconductor layer not covered by the organic conductive layer within the void area,
the etching stopper layer is disposed on portions of the organic semiconductor layer not covered by the organic conductive layer outside of the void area, and
the etching stopper layer includes a reaction product of the organic semiconductor layer and the etching gas.

2. The thin film transistor according to claim 1 ,
wherein the etching gas contains one active gas selected from among oxygen (O 2 ) and halogens, and
wherein the metallic element and the semi-metallic element are one selected from the group consisting of beryllium (Be), magnesium (Mg), aluminum (Al), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (Va), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), barium (Ba), hafnium (Rf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Rg), thallium (Tl), lead (Pb), bismuth (Bi), polonium (Po), boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb) and tellurium (Te).

3. The thin film transistor according to claim 1 ,
wherein the organic semiconductor layer includes a metal-containing material that is an organic semiconductor material which includes a group containing the at least one of the metallic element and the semi-metallic element, and
wherein the organic conductive layer includes a non-metal-containing material that is at least one of an organic conductive material and an organic semiconductor material which does not contain the at least one of the metallic element and the semi-metallic element.

4. The thin film transistor according to claim 1 , wherein,
the etching gas contains oxygen,
the organic semiconductor layer includes a metal-containing material that contains silicon (Si) as a constituent element, and
the organic conductive layer includes a non-metal-containing material that does not contain silicon as a constituent element.

5. The thin film transistor according to claim 1 , wherein the organic conductive layer is a hole injection layer for enhancing charge injection efficiency between the source and drain electrodes and the organic semiconductor layer.

6. The thin film transistor according to claim 1 , wherein the source and drain electrodes mask the organic conductive layer during an etching process.

7. The thin film transistor according to claim 1 , further including a second organic semiconductor layer provided between a gate insulating layer and the organic semiconductor layer.

8. The thin film transistor according to claim 7 , wherein the second organic semiconductor layer is formed from a non-metal-containing material.

9. The thin film transistor according to claim 7 , wherein the second organic semiconductor layer is formed from a metal-containing material.

10. The thin film transistor according to claim 7 , wherein the second organic semiconductor layer functions as an etching stopper.

11. The thin film transistor according to claim 1 , wherein the etching stopper layer includes a product of (i) at least one of a metallic element and the semi-metallic element of the organic semiconductor layer and (ii) the etching gas.

12. The thin film transistor according to claim 1 , wherein the etching stopper layer is disposed on etched portions of the organic semiconductor layer.

13. The thin film transistor according to claim 12 , wherein the etching stopper layer reduces an etching rate as the reaction product is built up on the surface of the organic semiconductor layer.

14. The thin film transistor according to claim 1 , wherein the reaction product is silicon oxide.

15. The thin film transistor according to claim 1 , wherein the first and second portions of the organic conductive layer have a work function approximate to an ionization potential of the organic semiconductor layer.

16. A method of manufacturing a thin film transistor, comprising:
forming an organic semiconductor layer including at least one of a metallic element and a semi-metallic element capable of reacting with an etching gas;
forming an organic conductive layer on portions of a surface of the organic semiconductor layer, wherein the organic conductive layer does not contain the at least one of the metallic element and the semi-metallic element capable of reacting with the etching gas;
forming a source electrode on a first portion of the organic conductive layer;
forming a drain electrode on a second portion of the organic conductive laver, wherein the source electrode and the drain electrode are spaced apart from each other and the source electrode and the drain electrode mask the organic conductive layer during a dry etching process;
dry etching the organic conductive layer not covered by the source and drain electrodes utilizing the etching gas such that the first and second portions of the organic conductive layer are spaced apart from each other forming a void area between the spaced apart first and second portions of the organic conductive layer; and
forming an etching stopper layer on portions of the organic semiconductor layer not covered by the organic conductive layer within the void area, and
forming the etching stopper layer on portions of the organic semiconductor layer not covered by the organic conductive layer outside of the void area, wherein the etching stopper layer is formed of a reaction product of (i) the at least one of the metallic element and the semi-metallic element of the organic semiconductor layer and (ii) the etching gas.

17. The method of manufacturing a thin film transistor according to claim 16 , further comprising forming the etching stopper layer on etched portions of the organic semiconductor layer.

18. The method of manufacturing a thin film transistor according to claim 17 , wherein the etching stopper layer reduces an etching rate as the reaction product is built up on the surface of the organic semiconductor layer.

19. An electronic apparatus utilizing a thin film transistor comprising:
an organic semiconductor layer including at least one of a metallic element and a semi-metallic element capable of reacting with an etching gas;
an or

Assignees

• Katsuhara Mao
• Sony Corp

Inventors

• Katsuhara Mao

Classifications

• H01L51/0017

  Electricity · mapped topic

• H01L51/0562 Primary

  Electricity · mapped topic

• H10K71/231 Primary

  by etching of existing layers · CPC title

• H10K10/486 Primary

  the channel region comprising two or more active layers, e.g. forming pn heterojunctions · CPC title