Stacked semiconductor device, and method and apparatus of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9343292-B2
Application number	US-201414220557-A
Country	US
Kind code	B2
Filing date	Mar 20, 2014
Priority date	Mar 21, 2013
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching.

First claim

What is claimed is:

1. A method of manufacturing a stacked semiconductor device, comprising:
forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film;
etching the silicon nitride films in the stacked film;
after etching the silicon nitride films, removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and
forming electrodes in regions where the silicon nitride films are etched in the etching.

2. The method of claim 1 , wherein removing includes supplying hydrogen and oxygen gases into the silicon oxide films.

3. The method of claim 1 , wherein removing is performed after a shaping process of the stacked semiconductor device.

4. A stacked semiconductor device manufactured by the method of claim 1 .

Assignees

• Tokyo Electron Ltd

Inventors

• Hasebe Kazuhide
• Obu Tomoyuki
• Kurokawa Masaki

Classifications

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title