Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal

Patent metadata

Field	Value
Publication number	US-9324936-B2
Application number	US-201314431140-A
Country	US
Kind code	B2
Filing date	Sep 12, 2013
Priority date	Sep 25, 2012
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

First claim

The invention claimed is:

1. Magnetic logic unit (MLU) cell comprising:
a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction comprising a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer between the first and second magnetic layers;
a strap, electrically connecting the magnetic tunnel junction in series with the second magnetic tunnel junction; and
a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization;
the first and second magnetic layers and the barrier layer being arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer;
the MLU cell further comprising a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

2. The MLU cell according to claim 1 , wherein
the biasing device comprises a permanent magnet arranged for applying the static biasing magnetic field.

3. The MLU cell according to claim 1 , wherein
the biasing device comprises a biasing layer included in the magnetic tunnel junction and arranged for applying the static biasing magnetic field.

4. The MLU cell according to claim 3 , wherein
the biasing layer comprises a permanent magnet.

5. The MLU cell according to claim 4 , wherein
the biasing layer comprises a FePt or a CoCr alloy.

6. The MLU cell according to claim 3 , wherein
the biasing layer comprises an exchange biased pinned layer comprising a third magnetic layer and an antiferromagnetic layer, and wherein
the antiferromagnetic layer exchange-couples the third magnetic layer such that a magnetization of the magnetic layer is oriented substantially parallel to the direction of the external magnetic field.

7. The MLU cell according to claim 6 , wherein
the magnetic layer comprises a CoFe-based alloy.

8. The MLU cell according to claim 6 , wherein
the antiferromagnetic layer comprises a PtMn-based alloy.

9. The MLU cell according to claim 6 , wherein
the biasing layer comprises a plurality of multilayer comprising the magnetic layer and antiferromagnetic layer.

10. MLU amplifier comprising a plurality of MLU cells, each MLU cell comprising: a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction comprising a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer between the first and second magnetic layers; a strap, electrically connecting the magnetic tunnel junction in series with the second magnetic tunnel junction; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization; the first and second magnetic layers and the barrier layer being arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer; the MLU cell further comprising a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field;
wherein the MLU cells are electrically connected in series via a current line.

Assignees

• Crocus Technology Sa

Inventors

• Prejbeanu Ioan Lucian
• Dieny Bernard
• Mackay Kenneth
• Cambou Bertrand

Classifications

• H03K19/18

  using galvano-magnetic devices, e.g. Hall-effect devices · CPC title

• H01L43/10

  Electricity · mapped topic

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• H03F15/00 Primary

  Amplifiers using galvano-magnetic effects not involving mechanical movement, e.g. using Hall effect · CPC title

• H01L43/02 Primary

  Electricity · mapped topic