Magnetoresistance effect device and high frequency device

Patent metadata

Field	Value
Publication number	US-10439592-B2
Application number	US-201816048034-A
Country	US
Kind code	B2
Filing date	Jul 27, 2018
Priority date	Aug 7, 2017
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.

First claim

What is claimed is:

1. A magnetoresistance effect device, comprising:
at least one magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the magnetization fixed layer, and a spacer layer sandwiched between the magnetization fixed layer and the magnetization free layer;
a first signal line that is configured to generate a high frequency magnetic field when a high frequency current flows and apply the high frequency magnetic field to the magnetization free layer; and
a DC application terminal that is configured to be capable of connecting a power supply for applying a DC current or a DC voltage in a stacking direction of the magnetoresistance effect element,
wherein the magnetoresistance effect element is disposed with respect to the DC application terminal such that the DC current flows from the magnetization fixed layer to the magnetization free layer in the magnetoresistance effect element or such that the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.

2. The magnetoresistance effect device according to claim 1 , further comprising a frequency setting apparatus that is configured to be capable of setting a ferromagnetic resonance frequency of the magnetization free layer of the magnetoresistance effect element.

3. The magnetoresistance effect device according to claim 1 , wherein the first signal line is connected to the at least one magnetoresistance effect element.

4. The magnetoresistance effect device according to claim 1 ,
wherein the at least one magnetoresistance effect element comprises a plurality of magnetoresistance effect elements,
the magnetoresistance effect elements are connected in parallel to each other, and
a ferromagnetic resonance frequency of the magnetization free layer of at least one of the magnetoresistance effect elements is different from a ferromagnetic resonance frequencies of the magnetization free layers of other magnetoresistance effect elements.

5. The magnetoresistance effect device according to claim 1 ,
wherein the at least one magnetoresistance effect element comprises a plurality of magnetoresistance effect elements,
the magnetoresistance effect elements are connected in parallel to each other, and
a frequency setting apparatus that is configured to be capable of setting a ferromagnetic resonance frequencies of the magnetization free layers of each of the magnetoresistance effect elements is provided around each of the magnetoresistance effect elements.

6. The magnetoresistance effect device according to claim 1 ,
wherein the at least one magnetoresistance effect element comprises a plurality of magnetoresistance effect elements,
the magnetoresistance effect elements are connected in series to each other, and
a ferromagnetic resonance frequency of the magnetization free layer of at least one of the magnetoresistance effect elements is different from a ferromagnetic resonance frequencies of the magnetization free layers of other magnetoresistance effect elements.

7. The magnetoresistance effect device according to claim 1 ,
wherein the at least one magnetoresistance effect element comprises a plurality of magnetoresistance effect elements,
the magnetoresistance effect elements are connected in series to each other, and
a frequency setting apparatus that is configured to be capable of setting a ferromagnetic resonance frequency of the magnetization free layer of each of the magnetoresistance effect elements is provided around each of the plurality of magnetoresistance effect elements.

8. The magnetoresistance effect device according to claim 1 ,
wherein the at least one magnetoresistance effect element comprises a plurality of magnetoresistance effect elements,
each of the magnetoresistance effect elements is connected to an output signal line through which a high frequency current output from the magnetoresistance effect element flows,
the first signal line is disposed at a position at which a high frequency magnetic field is applied to the magnetization free layer of at least one of the magnetoresistance effect elements, and
the output signal line is disposed at a position at which a high frequency magnetic field is applied to a magnetization free layer of a magnetoresistance effect element different from the magnetoresistance effect element to which the high frequency magnetic field is applied by the first signal line.

9. A high frequency device using the magnetoresistance effect device according to claim 1 .

10. The magnetoresistance effect device according to claim 1 , wherein the first signal line is separated from the at least one magnetoresistance effect element.

Assignees

• Tdk Corp

Inventors

• Degawa Naomichi
• Yamane Takekazu

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H03F15/00

  Amplifiers using galvano-magnetic effects not involving mechanical movement, e.g. using Hall effect · CPC title

• H03H11/16

  Networks for phase shifting · CPC title

• H01F10/329 Primary

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title