Method for producing a substrate holder

Patent metadata

Field	Value
Publication number	US-9321636-B2
Application number	US-201214000354-A
Country	US
Kind code	B2
Filing date	Feb 16, 2012
Priority date	Feb 18, 2011
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A method for producing a holder of at least one substrate from a first and a second plate, each including first and second parallel flat faces, the method including: a) delimitation on the first face of the second plate of plural surfaces by a non-bondable area in which a direct bonding with a face of the first plate is prevented; b) bringing the first face of the second plate into contact with the first face of the first plate; c) direct bonding between the first faces except in the non-bondable area; and d) removal of the portions of the second plate located vertically below surfaces inside the non-bondable area.

First claim

The invention claimed is:

1. A method for producing a holder of at least one substrate, wherein the holder includes at least one cavity to hold the substrate, from at least one first plate and one second plate, each including first and second parallel flat faces, the method comprising:
a) delimiting only on the first flat face of the second plate at least one surface corresponding to the cavity to be made, each of the at least one surface having a weak bonding area in which a bonding energy, with a face of the first plate, is less than 200 mJ/m 2 , the weak bonding area including at least a perimeter of the surface, and portions of the surface other than the weak bonding area having bonding properties which are the same as those of a remainder of the first face of the second plate;
b) bringing the first face of the second plate into contact with the second face of the first plate;
c) direct bonding between the first and second faces; and
d) after said direct bonding, removal of the portion of the second plate located directly below the surface inside the weak bonding area.

2. A method according to claim 1 , wherein, in c), there is no bonding in the weak bonding area.

3. A method according to claim 1 , wherein the weak bonding area is formed by at least a first saw cut.

4. A method according to claim 1 , wherein the weak bonding area is square in shape.

5. A method according to claim 1 , wherein the weak bonding area is formed by at least a first saw cut, and by d) thinning the second plate from its second face until the first saw cut or saw cuts is/are reached, and releasing a block of material of the second plate located vertically below the surface.

6. A method according to claim 1 , wherein, in a), plural surfaces are delimited.

7. A method according to claim 1 , wherein the plates are between 100 mm and 450 mm in diameter, and between 525 μm and 1000 μm thick.

8. A method according to claim 1 , wherein the weak bonding area is formed by at least a first saw cut, and wherein the at least one saw cut and/or a second saw cut are aligned at 45° to the crystalline planes of the second and/or third plate(s).

9. A method to claim 1 , further comprising, prior to a) delimitation of the at least one surface, formation of a thermal oxide or a nitride layer on the surface of at least the second plate and, after a), removal of the thermal oxide formed on the surface.

10. A method according to claim 9 , wherein the removal of the thermal oxide formed on the surface is achieved by an acid solution.

11. A method according to claim 1 , wherein the weak bonding area is formed by at least a first saw cut and by d) making two saw cuts in the second face of the second plate at right angles to the first saw cuts until the first saw cuts are reached, and in releasing a block of material of the second plate located vertically below the surface.

12. A method according to claim 11 , wherein the first saw cuts are identified by infrared or acoustic observation.

13. A method according to claim 1 , further comprising between a) and b), al) treatment of the surface such that it has bonding properties inferior to those of the remainder of the first face of the second plate.

14. A method according to claim 13 , wherein al) surface treatment comprises increasing a roughness of the surface, such that bonding with the second face of the first plate is prevented.

15. A method according to claim 14 , wherein the increasing the roughness of material to prevent bonding is implemented by etching.

16. A method according to claim 15 , wherein the etching is achieved with tetramethylammonium hydroxide.

17. A method according to claim 13 , wherein al) treatment of the surface comprises removal of the material from the surface so as to create a clearance between the surface and the first face of the first plate.

18. A method according to claim 17 , wherein the removal of material to prevent contact is implemented by etching.

19. A method according to claim 18 , wherein the etching is achieved with tetramethylammonium hydroxide.

20. A method according to claim 1 , wherein, prior to a), the second plate is assembled with a third plate comprising first and second parallel flat faces by direct bonding between the second face of the second plate and a first face of the third plate, the direct bonding having bonding energy greater than bonding energy between the first face of the second plate and the second face of the first plate outside the weak bonding area.

21. A method according to claim 20 , further comprising, after the second and third plates have been assembled, removal of the oxide layers of at least the second and third plates.

22. A method according to claim 20 , wherein the weak bonding area is formed by at least a first saw cut and wherein the depth of the first saw cuts is less than the thickness of the second plate.

23. A method according to claim 20 , wherein d) is obtained by exerting a separation force between the first face of the third plate and the second face of the second plate at a lateral end of the stack of the second and third plates.

24. A method according to claim 20 , further comprising, prior to the assembly of the second and third plates, formation of a thermal oxide layer on the surface of at least the second and third plates.

25. A method according to claim 24 , wherein the bonding between the second face of the second plate and a first face of the third plate is a hydrophilic bonding, and the bonding between the first face of the second plate and the second face of the first plate is a hydrophobic bonding.

Assignees

• Fournel Frank
• Bally Laurent
• Zussy Marc
• Commissariat à l'énergie atomique et aux énergies alternatives

Inventors

• Fournel Frank
• Bally Laurent
• Zussy Marc

Classifications

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7414

  the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P90/1914 Primary

  using bonding · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title