Plasma processing chamber for bevel edge processing

Patent metadata

Field	Value
Publication number	US-9281166-B2
Application number	US-201414189978-A
Country	US
Kind code	B2
Filing date	Feb 25, 2014
Priority date	Feb 2, 2007
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends in an annular path radially outward of the edge exclusion area and is electrically isolated from the wafer support. A second electrode is configured with a center area opposite to the wafer support. A second electrically grounded ring extends in an annular path radially outward of the second electrode and the edge exclusion area. The second electrically grounded ring is electrically isolated from the center area. An annular mount section has a DC bias ring, and the DC bias ring opposes the edge exclusion area when the wafer is present. A DC control circuit is provided for applying a DC voltage to the DC bias ring.

First claim

What is claimed is:

1. A chamber for processing a bevel edge of a substrate, comprising:
a bottom electrode defined to support a substrate in the chamber, the bottom electrode having a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode, the bottom second level defined at a step below the bottom first level;
a top electrode oriented above the bottom electrode, the top electrode having a top first level and a top second level, the top first level being opposite the bottom first level and the top second level being opposite the bottom second level, the top second level defined at a step above the top first level;
a bottom grounded electrode disposed around the bottom electrode at the bottom second level;
a top grounded electrode disposed around the top electrode at the top second level;
a bottom ring mount oriented at the bottom second level, the bottom ring mount supporting a bottom permanent magnet; and
a top ring mount oriented at the top second level, the top ring mount supporting a top permanent magnet, the top permanent magnet being oriented opposite the bottom permanent magnet.

2. The chamber of claim 1 , wherein the top and bottom permanent magnets are one of a south pole magnet and one of a north pole magnet.

3. The chamber of claim 1 , wherein the top second level and the bottom second level are opposite of each other, and define a region for plasma etching of the substrate edge when present.

4. The chamber of claim 1 , further comprising a first RF power connection to the top electrode and a second RF power connection to the bottom electrode.

5. The chamber of claim 1 , wherein the bottom grounded electrode is ring shaped.

6. The chamber of claim 5 , wherein the top grounded electrode is ring shaped.

7. The chamber of claim 1 , wherein a first insulator ring is disposed between the bottom electrode and the bottom grounded electrode, and a second insulator ring is disposed between the top electrode and the top grounded electrode.

8. The chamber of claim 1 , wherein the bottom permanent magnet is adjustably mounted in the bottom ring mount to allow the bottom permanent magnet to be adjusted axially relative to the top permanent magnet.

9. The chamber of claim 1 , wherein the top permanent magnet is adjustably mounted in the top ring mount to allow the top permanent magnet to be adjusted axially relative to the bottom permanent magnet.

10. The chamber of claim 1 , wherein the top permanent magnet is adjustably mounted in the top ring mount to allow the top permanent magnet to be adjusted axially relative to the bottom permanent magnet, and the bottom permanent magnet is adjustably mounted in the bottom ring mount to allow the bottom permanent magnet to be adjusted axially relative to the top permanent magnet.

11. A chamber for etching a bevel edge of a substrate, comprising:
a lower electrode defined to support a substrate in the chamber for plasma etching when powered, the lower electrode having a first level for supporting the substrate and a second level near an outer edge of lower electrode, the second level defined at a step below the first level;
an upper electrode oriented above the lower electrode, the upper electrode having a first level and a second level, the first level of the upper electrode being opposite the first level of the lower electrode and the second level of the upper electrode being opposite the second level of the lower electrode, the second level of upper electrode defined at a step above the first level of the upper electrode;
a bottom grounded electrode disposed around the lower electrode at the second level of the lower electrode;
a top grounded electrode disposed around the upper electrode at the second level of the upper electrode;
a lower ring mount oriented at the second level of the lower electrode, the lower ring mount supporting a bottom permanent magnet; and
an upper ring mount oriented at the second level of the upper electrode, the upper ring mount supporting a top permanent magnet, the top permanent magnet being oriented opposite the bottom permanent magnet.

12. The chamber of claim 11 , wherein a separation between the first levels of the upper and lower electrodes is less than a separation between the second levels of the upper and lower electrodes.

13. The chamber of claim 11 , wherein a region for plasma etching of a substrate edge, when the substrate is present, is defined between the second levels of the upper and lower electrodes.

14. The chamber of claim 11 , further comprising a first RF power connection to the upper electrode and a second RF power connection to the lower electrode.

15. The chamber of claim 11 , wherein the bottom grounded electrode is ring shaped.

16. The chamber of claim 15 , wherein the top grounded electrode is ring shaped.

17. The chamber of claim 11 , wherein a first insulator ring is disposed between the bottom electrode and the bottom grounded electrode, and a second insulator ring is disposed between the top electrode and the top grounded electrode.

18. A chamber for processing a bevel edge of a substrate, comprising:
a bottom electrode defined to support a substrate in the chamber, the bottom electrode having a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode, the bottom second level defined at a step below the bottom first level;
a top electrode oriented above the bottom electrode, the top electrode having a top first level and a top second level, the top first level being opposite the bottom first level and the top second level being opposite the bottom second level, the top second level defined at a step above the top first level;
a bottom grounded electrode disposed around the bottom electrode at the bottom second level;
a top grounded electrode disposed around the top electrode at the top second level;
a top ring mount oriented at the top second level, the top ring mount supporting a top permanent magnet; and
a bottom ring mount oriented at the bottom second level, the bottom ring mount supporting a bottom permanent magnet, the bottom permanent magnet being oriented opposite the top permanent magnet,
wherein one of the top ring mount or the bottom ring mount is configured to allow one of the respective top and bottom permanent magnets to be adjusted relative the other of the respective top and bottom permanent magnets.

19. The chamber of claim 18 , wherein the bottom ring mount is configured to allow the bottom permanent magnet to be adjusted relative to the top permanent magnet.

20. The chamber of claim 18 , wherein the top ring mount is configured to allow the top permanent magnet to be adjusted relative to the bottom permanent magnet.

Assignees

• Lam Res Corp

Inventors

• Kim Yunsang
• Bailey Iii Andrew D

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P70/54

  Cleaning of wafer edges · CPC title

• H01J37/32385 Primary

  Treating the edge of the workpieces · CPC title

• H01J37/32366

  Localised processing · CPC title