Substrate treatment method, non-transitory computer storage medium and substrate treatment system

Patent metadata

Field	Value
Publication number	US-9280052-B2
Application number	US-201414177322-A
Country	US
Kind code	B2
Filing date	Feb 11, 2014
Priority date	Mar 6, 2013
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.

First claim

What is claimed is:

1. A substrate treatment method of forming a resist pattern over a substrate, the method comprising:
a resist film forming step of forming a resist film over a substrate;
an exposure step of exposing the resist film into a predetermined pattern;
a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent, wherein the treatment agent is alcohol; and
a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate,
wherein an infiltration amount of the metal infiltrating the exposed portion in the metal treatment step is controlled by adjusting at least a time period during which the metal is caused to infiltrate in the metal treatment step, an amount of solvent in the resist film treated in the metal treatment step, or an exposure amount in the exposure step,
wherein the metal treatment step, the treatment agent is supplied onto the resist film and the treatment agent is caused to enter the exposed portion, and then a metal-containing agent containing the metal is supplied onto the resist film so as to cause the metal to infiltrate the exposed portion.

2. The substrate treatment method according to claim 1 ,
wherein in the metal treatment step, after the metal is caused to infiltrate the exposed portion, metal deposited on the unexposed portion is removed.

3. The substrate treatment method according to claim 1 ,
wherein in the metal treatment step, the treatment agent and the metal-containing agent are supplied each in a liquid form or in a gas form onto the resist film.

4. The of claim 1 , wherein the alcohol of the treatment agent is IPA (isopropyl alcohol), ethanol, butanol, MIBC (methyl isobutyl carbinol).

Assignees

• Tokyo Electron Ltd

Inventors

• Iwao Fumiko
• Shimura Satoru

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• G03F7/265

  Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation · CPC title