Templates including self-assembled block copolymer films

US9257256B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9257256-B2
Application numberUS-201314075647-A
CountryUS
Kind codeB2
Filing dateNov 8, 2013
Priority dateJun 12, 2007
Publication dateFeb 9, 2016
Grant dateFeb 9, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A template for etching a substrate, the template comprising: cylindrical openings and half-cylindrical openings extending through a polymer matrix in an array of trenches, each trench of the array of trenches having sidewalls parallel to one another along a length of the trench, opposing ends, a floor, and a width, the polymer matrix in first trenches comprising the cylindrical openings in a perpendicular orientation to the floor of the first trenches and extending the length of the first trenches, the cylindrical openings separated at a pitch distance of about L o , and the polymer matrix in second trenches comprising half-cylindrical openings in a parallel orientation to the floor of the second trenches and extending the length of the second trenches, the half-cylindrical openings separated at a pitch distance of about L 0 . 2. The template of claim 1 , wherein the cylindrical openings in the polymer matrix in the first trenches are in a hexagonal array. 3. The template of claim 2 , wherein the ends of the first trenches are rounded. 4. The template of claim 2 , wherein the width of each of the first trenches is about L 0 or about n*L 0 where n is an integer of 3 or greater. 5. The template of claim 1 , wherein the cylindrical openings are in a single line extending the length of the first trenches. 6. The template of claim 5 , wherein the width of each of the first trenches is from about 1.5*L 0 to about 2*L 0 . 7. The template of claim 1 , wherein the cylindrical openings extend through the polymer matrix to the floors of the first trenches. 8. The template of claim 1 , wherein the polymer matrix is crosslinked and comprises a majority block of a self-assembled block copolymer. 9. A template for etching a substrate, the template comprising: cylindrical openings and half-cylindrical openings extending through a polymer matrix of a majority block of a self-assembled block copolymer film within trenches in a material, each trench having sidewalls parallel to one another along a length of the trench, opposing ends, a floor, and a width, the polymer matrix in first trenches comprising the cylindrical openings perpendicular to the floor of the first trenches and extending the length of the first trenches, and separated at a pitch distance of about L o , and the polymer matrix in second trenches comprising the half-cylindrical openings parallel to the floor of the second trenches and extending the length of the second trenches and separated at a pitch distance of about L o . 10. A template for etching a substrate, the template comprising: a self-assembled block copolymer film in first trenches in a material, the first trenches having sidewalls parallel to one another along a length of the first trenches and the self-assembled block copolymer film in the first trenches comprising cylindrical openings therein in a perpendicular orientation to a floor of the first trenches and extending the length of the first trenches; the self-assembled block copolymer film in second trenches in the material, the second trenches having sidewalls parallel to one another along a length of the second trenches and the self-assembled block copolymer film in the second trenches comprising half-cylinder openings therein in a perpendicular orientation from ends of the second trenches and in a parallel orientation to floors and to the sidewalls of the second trenches; and the self-assembled block copolymer film in third trenches in the material, the third trenches having sidewalls parallel to one another along a length of the third trenches and the self-assembled block copolymer film in the third trenches comprising cylindrical openings therein in a perpendicular orientation to a floor of the third trenches. 11. The template of claim 10 , wherein the cylindrical openings in the self-assembled block copolymer film in the first trenches and the half-cylinder openings in the self-assembled block copolymer film in the second trenches extend to respective floors of the first trenches and the second trenches. 12. The template of claim 10 , wherein the half-cylinder openings in the self-assembled block copolymer film in the second trenches overlie the polymer matrix in the second trenches. 13. The template of claim 10 , wherein the cylindrical openings in the self-assembled block copolymer film in the first trenches have a center-to-center pitch at or about L o , where L o is the pitch value of a block copolymer of the self-assembled block copolymer film. 14. The template of claim 10 , wherein the third trenches comprise ends angled about 60° to the sidewalls of the third trenches. 15. The template of claim 10 , wherein a width of the half-cylinder openings in the self-assembled block copolymer film in the second trenches is about 0.5 L o , where L o is the pitch value of a block copolymer of the self-assembled block copolymer film. 16. The template of claim 10 , wherein the cylindrical openings in the self-assembled block copolymer film in the first trenches and in the self-assembled block copolymer film in the third trenches have a diameter of from about 5 nm to 50 nm and an aspect ratio of from about 1:1 to about 1:2. 17. The template of claim 10 , wherein the half-cylinder openings in the self-assembled block copolymer film in the second trenches have a width of from about 5 nm to 50 nm and an aspect ratio of about 1:1. 18. The template of claim 10 , wherein the cylindrical openings in the self-assembled block copolymer film in the third trenches comprise a hexagonal array of the cylindrical openings.

Assignees

Inventors

Classifications

  • Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002) · CPC title

  • Coated · CPC title

  • H01J37/02Primary

    Details · CPC title

  • Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation · CPC title

  • Honeycomb-like · CPC title

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What does patent US9257256B2 cover?
Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification B81C1/00031. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Feb 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).