Plasma processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-9237638-B2
Application number	US-201013391310-A
Country	US
Kind code	B2
Filing date	Aug 16, 2010
Priority date	Aug 21, 2009
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32 . The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47 . The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.

First claim

What is claimed is:

1. A plasma processing apparatus comprising:
a processing chamber, having a top opening, configured to perform therein a plasma process on a processing target substrate;
a gas supply unit configured to supply a plasma processing gas into the processing chamber;
a mounting table that is provided within the processing chamber and is configured to mount the processing target substrate;
a microwave generator configured to generate a microwave for plasma excitation;
a dielectric plate placed for sealing the processing chamber hermetically by covering the top opening of the processing chamber and configured to transmit the microwave into the processing chamber;
a slot antenna plate, having a plurality of slot holes, provided on the dielectric plate and configured to radiate the microwave into the dielectric plate;
a wavelength shortening plate provided on the slot antenna plate and configured to propagate the microwave in a radial direction; and
a microwave supply unit configured to supply the microwave generated by the microwave generator to the slot antenna plate,
wherein the microwave supply unit comprises:
a coaxial waveguide including a substantially circular rod-shaped inner conductor whose one end is connected to a center of the slot antenna plate and a substantially cylindrical outer conductor provided outside the inner conductor with a gap therebetween in a radial direction; and
a distance varying device disposed proximate an upper surface of the wavelength shortening plate and configured to vary a distance between a part of an outer surface of the inner conductor and a facing member facing the part of the outer surface of the inner conductor in a radial direction,
wherein the distance varying device includes at least one stub member extensible from the outer conductor toward the inner conductor in an obliquely downward direction so that a leading end of the stub member is extended to be closer than a trailing end of the stub member, to the wavelength shortening plate.

2. The plasma processing apparatus of claim 1 , wherein the stub member includes a rod-shaped member supported at the outer conductor and extensible in the radial direction; and a moving distance adjusting member for adjusting a moving distance of the rod-shaped member in the radial direction.

3. The plasma processing apparatus of claim 1 , wherein the at least one stub member is plural in number, and the stub members are arranged at an interval in a circumferential direction.

4. The plasma processing apparatus of claim 3 , wherein the stub members are arranged at a regular interval in the circumferential direction.

5. The plasma processing apparatus of claim 1 , wherein at least a part of the stub member to be located in the gap is made of a dielectric material.

6. The plasma processing apparatus of claim 1 , wherein the distance varying device is configured to control a distance between the part of the outer surface of the inner conductor and the facing member thereto in the radial direction to be equal to or smaller than about 4 mm.

7. The plasma processing apparatus of claim 1 , wherein the microwave generator includes a magnetron, an isolator and a tuner.

8. The plasma processing apparatus of claim 1 ,
wherein a distance between an uppermost surface of the wavelength shortening plate and the leading end of the stub member in an axial direction of the coaxial waveguide is set to be equal to or smaller than about 10 mm.

Assignees

• Ishibashi Kiyotaka
• Morita Osamu
• Tokyo Electron Ltd

Inventors

• Ishibashi Kiyotaka
• Morita Osamu

Classifications

• H01J37/3222 Primary

  Antennas · CPC title

• C23C16/511

  using microwave discharges · CPC title

• H01J37/32229

  Waveguides · CPC title

• H01J37/32192 Primary

  Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title