Fabricating method of customized mask and fabricating method of semiconductor device using customized mask

Patent metadata

Field	Value
Publication number	US-9230866-B2
Application number	US-201314140775-A
Country	US
Kind code	B2
Filing date	Dec 26, 2013
Priority date	Jan 14, 2013
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.

First claim

What is claimed is:

1. A fabricating method of a customized mask, the fabricating method comprising:
forming first patterns in a mold structure;
forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, such that side surfaces of the first patterns are surrounded by the second patterns;
measuring overlap failure between the first patterns and the second patterns; and
fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results,
wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.

2. The fabricating method as claimed in claim 1 , further comprising performing a high-temperature process on the mold structure, before forming the second patterns using the initial masks, such that the mold structure shrinks or expands.

3. The fabricating method as claimed in claim 2 , wherein compensating for the pattern positions further comprises shifting the positions of the at least some patterns of the initial masks in a same direction as a direction in which the mold structure shrinks or expands.

4. The fabricating method as claimed in claim 1 , wherein compensating for the pattern positions further comprises continuously varying the shift directions and sizes of at least some of the patterns of the initial masks.

5. The fabricating method as claimed in claim 1 , wherein compensating for the pattern positions further comprises gradually varying the shift directions and sizes of at least some of the patterns of the initial masks.

6. The fabricating method as claimed in claim 5 , wherein compensating for the pattern positions by gradually varying the shift directions and sizes of at least some of the patterns of the initial masks includes using non-continuous sections of the patterns of the initial masks.

7. The fabricating method as claimed in claim 1 , wherein compensating for the pattern positions is performed in a unit of at least one mold structure disposed within at least one shot.

8. The fabricating method as claimed in claim 1 , wherein compensating for the pattern positions is performed symmetrically in left and right directions relative to a center of the mold structure.

9. A fabricating method of a semiconductor device, the fabricating method comprising:
forming first patterns in a mold structure;
forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein;
measuring overlap failure between the first patterns and the second patterns;
fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results; and
patterning a plurality of layers on a substrate with the customized masks to form separating spaces between adjacent channel patterns,
wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.

10. The fabricating method as claimed in claim 9 , further comprising performing a process on the mold structure, before forming the second patterns using the initial masks, such that the mold structure shrinks or expands.

11. The fabricating method as claimed in claim 10 , wherein compensating for the pattern positions further comprises shifting the positions of the at least some patterns of the initial masks in a same direction as a direction in which the mold structure shrinks or expands.

12. The fabricating method as claimed in claim 9 , wherein compensating for the pattern positions further comprises continuously varying the shift directions and sizes of at least some of the patterns of the initial masks.

13. The fabricating method as claimed in claim 9 , wherein compensating for the pattern positions further comprises gradually varying the shift directions and sizes of at least some of the patterns of the initial masks.

14. The fabricating method as claimed in claim 13 , wherein compensating for the pattern positions by gradually varying the shift directions and sizes of at least some of the patterns of the initial masks includes using non-continuous sections of the patterns of the initial masks.

15. The fabricating method as claimed in claim 9 , wherein compensating for the pattern positions is performed symmetrically in left and right directions relative to a center of the mold structure.

16. A fabricating method of a customized mask, the fabricating method comprising:
forming first patterns in a mold structure to form a patterned mold structure;
performing a high-temperature process on the patterned mold structure, such that a width of the mold structure changes;
forming second patterns in the changed width mold structure using initial masks;
measuring overlap failure between the first patterns and the second patterns; and
fabricating customized masks by shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns after the high-temperature process to minimize overlap failure between the first patterns and the second patterns.

17. The fabricating method as claimed in claim 16 , wherein measuring overlap failure between the first patterns and the second patterns includes measuring alignment between the first and second patterns.

18. The fabricating method as claimed in claim 17 , wherein measuring alignment between the first and second patterns includes:
measuring a first distance between a left sidewall of a second pattern and an adjacent respective side of an overlapping first pattern;
measuring a second distance between a right sidewall of the second pattern and an adjacent respective side of the overlapping first pattern; and
comparing the first distance to the second distance.

19. The fabricating method as claimed in claim 18 , wherein fabricating the customized masks includes adjusting a distance between adjacent mask patterns based on the measuring results, such that a difference between the first and second distances is minimized.

20. The fabricating method as claimed in claim 16 , wherein fabricating the customized masks includes adjusting a distance between adjacent patterns of the customized masks based on the measuring results, such that the first patterns are centered with respect to the second patterns.

Assignees

• Lee Jae-Han
• Cho Hoo-Sung
• Kim Cheol-Hong
• Park Seung-Hak
• Samsung Electronics Co Ltd

Inventors

• Lee Jae-Han
• Cho Hoo-Sung
• Kim Cheol-Hong
• Park Seung-Hak

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G03F1/84

  Inspecting · CPC title

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• H01L27/11556

  Electricity · mapped topic