Rapid Thermal Processing System With Cooling System
US-2024379390-A1 · Nov 14, 2024 · US
System and method for temperature control of a semiconductor wafer
US9111971B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9111971-B2 |
| Application number | US-201213562238-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2012 |
| Priority date | Jul 30, 2012 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.
First claim
Opening claim text (preview).
What is claimed is: 1. A method, comprising: receiving a semiconductor wafer at a first chamber when the first chamber is at a first pressure level and the semiconductor wafer is at a first temperature; sensing a temperature of the semiconductor wafer, a wafer cassette or an ambient temperature with at least one temperature sensor; heating the semiconductor wafer, by one of a first or a second heating module, to a second temperature and reducing the pressure level of the first…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P72/0602Primary
Electricity · mapped topic
- H10P95/00Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9111971B2 cover?
- A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second c…
- Who is the assignee on this patent?
- Shavit Lavy, Kraus Rafi, Yair Itzak, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10P72/0602. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).