Method and apparatus for cleaning semiconductor wafer
US-2015332940-A1 · Nov 19, 2015 · US
US9004079B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9004079-B2 |
| Application number | US-201113078360-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 1, 2011 |
| Priority date | Apr 8, 2010 |
| Publication date | Apr 14, 2015 |
| Grant date | Apr 14, 2015 |
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Disclosed is a substrate processing apparatus capable of drying a substrate to be processed while suppressing the pattern collapse or the occurrence of contamination. A substrate is held in a liquid bath while being immersed in a liquid, and the liquid bath is disposed in a processing space of a processing vessel. A processing of drying the substrate is performed by replacing the liquid in the liquid bath with a supercritical-state fluid. A predetermined mechanism moves liquid bath between a processing location in the processing case and a stand-by location outside the processing case. A heater installed in the processing case changes the fluid to a supercritical state or maintains the supercritical state while cooling mechanisms cool down the liquid bath moved to the stand-by location outside the processing vessel.
Opening claim text (preview).
What is claimed is: 1. A substrate processing apparatus, comprising: a liquid bath configured to hold and immerse a substrate to be processed in a liquid; a processing vessel configured to dispose the liquid bath in an internal processing space, replace the liquid in the liquid bath with a supercritical-state fluid, and depressurize the processing space such that the supercritical-state fluid is changed to a gaseous state, thereby drying the substrate; a fluid supplying unit configured to supply the fluid in a liquid state or a supercritical state to the processing vessel; a moving mechanism configured to move the liquid bath between a processing location within the processing vessel and a stand-by location outside the processing vessel where the substrate is exchanged; a heating mechanism configured to heat the processing space in order to change the fluid supplied to the processing vessel to the supercritical state or maintain the supercritical state; and a cooling mechanism provided at the stand-by location outside the processing vessel and configured to cool down the liquid bath moved to the stand-by location while the processing vessel is being heated independently from the liquid bath, wherein the cooling mechanism is provided in a location to face the outer surface of the liquid bath at the stand-by location outside the processing vessel such that the liquid bath is cooled at the stand-by location either with or without the substrate being disposed in the liquid bath. 2. The substrate processing apparatus of claim 1 , wherein the liquid is volatile and cooled down by the cooling mechanism before the liquid is supplied to the liquid bath. 3. The substrate processing apparatus of claim 1 , wherein the substrate is immersed in the liquid of the liquid bath after the liquid bath is cooled down by the cooling mechanism. 4. The substrate processing apparatus of claim 1 , wherein the liquid bath is configured to hold the substrate in a longitudinal direction. 5. The substrate processing apparatus of claim 1 , wherein the moving mechanism is configured to move the liquid bath in a horizontal direction. 6. The substrate processing apparatus of claim 1 , wherein a covering member is integrally installed in the liquid bath, thereby opening and closing carry-in and out holes formed in the processing vessel, and wherein the liquid bath includes a stopper mechanism configured to prevent the covering member covering an opening from being opened.
involving removal of lid, door or cover · CPC title
for drying · CPC title
the wafers being stored in a carrier, involving loading and unloading · CPC title
with the semiconductor substrates being dipped in baths or vessels · CPC title
Etching of wafers, substrates or parts of devices · CPC title
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