Breaking-in and cleaning method and apparatus for wafer-cleaning brush
US-2024066566-A1 · Feb 29, 2024 · US
Method for cleaning silicon wafer and apparatus for cleaning silicon wafer
US9136104B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136104-B2 |
| Application number | US-201113884350-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 11, 2011 |
| Priority date | Nov 15, 2010 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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- Title
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Abstract
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A silicon wafer after being cleaned by using a cleaning liquid is rinsed by using carbonic water. According to such a silicon wafer cleaning method, generation of static due to a rinsing treatment is not caused, so that an electrostatic breakdown is not caused, adhesion of dirt to a cleaned silicon wafer surface due to the static is not caused, adhesion of metal impurities can be prevented in the rinsing treatment of the silicon wafer and, while giving consideration to the cost, furthermore, a rinsing treatment using a clean rinsing liquid free from causing any residue can be performed.
First claim
Opening claim text (preview).
The invention claimed is: 1. A silicon wafer cleaning method, comprising steps of: a) providing at least one silicon wafer; b) cleaning the at least one silicon wafer with a cleaning liquid; c) measuring an amount of metal adhering to the at least one cleaned silicon wafer; d) providing a rinse comprising carbonic water having carbon dioxide; e) adjusting a concentration of carbon dioxide present in the carbonic water based on the measured amount of metal adhering to the a…
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Electricity · mapped topic
- H10P70/15Primary
Electricity · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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Frequently asked questions
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- What does patent US9136104B2 cover?
- A silicon wafer after being cleaned by using a cleaning liquid is rinsed by using carbonic water. According to such a silicon wafer cleaning method, generation of static due to a rinsing treatment is not caused, so that an electrostatic breakdown is not caused, adhesion of dirt to a cleaned silicon wafer surface due to the static is not caused, adhesion of metal impurities can be prevented in t…
- Who is the assignee on this patent?
- Chuuman Takaaki, Kawakatsu Takahiro, Kitami Katsunobu, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P70/15. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).