Method for fabricating three-dimensional semiconductor device using buried stop layer in substrate
US-2024268119-A1 · Aug 8, 2024 · US
US8975730B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975730-B2 |
| Application number | US-201213622573-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2012 |
| Priority date | Sep 20, 2011 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection layer. The vertical stack has a free lateral face on which the lower region, the upper region and the protection layer are exposed.
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That which is claimed: 1. A device comprising: a vertical stack comprising a first silicon substrate, a second silicon substrate, and at least one intermediate layer between said first silicon substrate and second silicon substrate; said vertical stack comprising at least one free lateral face on which said first and second silicon substrates are exposed; and said vertical stack comprising a protection material in a cavity adjacent said at least one intermediate layer, with sa…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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