Hole Pattern For Uniform Illumination Of Workpiece Below A Capacitively Coupled Plasma Source
US-2015380221-A1 · Dec 31, 2015 · US
US8961691B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8961691-B2 |
| Application number | US-55046809-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2009 |
| Priority date | Sep 4, 2008 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A disclosed film deposition apparatus includes a susceptor having in one surface a substrate receiving portion provided rotatably in a chamber; a heating unit including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.
Opening claim text (preview).
What is claimed is: 1. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising: a susceptor rotatably provided in the chamber; a substrate receiving portion in which the substrate is placed that is provided in one surface of the susceptor; a heat…
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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