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US-2024332075-A1 · Oct 3, 2024 · US
Method of depositing film
US9136133B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136133-B2 |
| Application number | US-201414308880-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 19, 2014 |
| Priority date | Jul 2, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
Official abstract text for this publication.
A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of depositing a film, the method comprising the steps of: alternately supplying a first process gas and a second process gas that react with each other to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of alternately supplying the first process gas and the second process gas to the substrate once each cycle; and continu…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10P14/432Primary
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US9136133B2 cover?
- A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/432. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).