Method for fabricating three-dimensional semiconductor device using buried stop layer in substrate
US-2024268119-A1 · Aug 8, 2024 · US
US8945331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945331-B2 |
| Application number | US-50242809-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 14, 2009 |
| Priority date | May 17, 2002 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer and an object to be peeled on a substrate; bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a peeling layer interposed therebetween; bonding a support to the semiconductor element with a two-sided tape interposed therebetween; peeling the semiconductor element from the first substrate at the peeling layer; bonding the semiconductor element to a first transferring member with an adhesive interposed therebetween; peeling t…
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