Large diamond crystal substrates and methods for producing the same

Patent metadata

Field	Value
Publication number	US-8940266-B2
Application number	US-64616309-A
Country	US
Kind code	B2
Filing date	Dec 23, 2009
Priority date	Dec 25, 2008
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.
According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.

First claim

What is claimed is:

1. A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
(1) implanting ions into a parent substrate of single-crystal diamond to form a graphitized, non-diamond layer near a surface of the parent substrate, and subsequently etching the non-diamond layer to separate therefrom a single-crystal diamond layer above the non-diamond layer;
(2) repeatedly subjecting the parent substrate used in Step (1) to the operation of Step (1), to separate from the parent substrate one or more single-crystal diamond layers having a substantially identical thickness to that of the single-crystal diamond layer separated in Step (1), wherein all of the single-crystal diamond layer obtained in Step (1) and the single-crystal diamond layers obtained in Step (2) are child substrates, wherein the separated faces of all of the child substrates have an off-set angle, crystal plane direction, strain distribution and defect distribution identical to those of the parent substrate, wherein each of the separated faces has been formed in Step (1) when separating each of the child substrates from the parent substrate;
(3) placing the plurality of the child substrates on a flat support such that side faces of adjacent child substrates are in contact with each other, directions of crystal faces of all of the child substrates are identical, and the separated faces of the child substrates are exposed as top faces; and
(4) growing a single-crystal diamond by a vapor-phase synthesis method on the separated faces of the plurality of child substrates placed on the support in Step (3), thereby bonding the plurality of child substrates.

2. The method according to claim 1 , wherein Step (1) further comprises, subsequent to forming a non-diamond layer, and prior to etching the non-diamond layer, growing a single-crystal diamond layer on the surface of the parent substrate by a vapor-phase synthesis method.

3. The method according to claim 1 , wherein the single-crystal diamond substrate having a large area obtained by the method of claim 1 is used as the parent substrate.

4. The method according to claim 1 , wherein the single-crystal diamond substrate obtained in Step (4) is used as another parent substrate.

5. A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
(1) implanting ions into a parent substrate of single-crystal diamond to form a graphitized, non-diamond layer near a surface of the parent substrate, and subsequently etching the non-diamond layer to separate therefrom a single-crystal diamond layer above the non-diamond layer;
(2) repeatedly subjecting the parent substrate used in Step (1) to the operation of Step (1), to further separate from the parent substrate one or more single-crystal diamond layers, wherein all of the single-crystal diamond layer obtained in Step (1) and the single-crystal diamond layers obtained in Step (2) are child substrates, wherein the separated faces of all of the child substrates have an off-set angle, crystal plane direction, strain distribution and defect distribution identical to those of the parent substrate, wherein each of the separated faces has been formed in Step (1) when separating each of the child substrates from the parent substrate;
(3) placing the plurality of the child substrates on a flat support such that side faces of adjacent child substrates are in contact with each other, directions of crystal faces of all of the child substrates are identical, and the separated faces of the child substrates are in contact with a surface of the support;
(4) growing a single-crystal diamond by a vapor-phase synthesis method on the plurality of the child substrates placed on the support in Step (3), thereby bonding the plurality of the child substrates; and
(5) inverting the child substrates bonded in Step (4) on the support, and subsequently growing a single-crystal diamond on the child substrates by a vapor-phase synthesis method, thereby growing a single-crystal diamond on the separated faces of the child substrates.

6. The method according to claim 5 , wherein Step (1) further comprises, subsequent to forming a non-diamond layer, and prior to etching the non-diamond layer, growing a single-crystal diamond layer on the surface of the parent substrate by a vapor-phase synthesis method.

7. The method according to claim 5 , wherein the single-crystal diamond substrate obtained in Step (5) is used as another parent substrate.

8. The method according to claim 5 , wherein the single-crystal diamond substrate having a large area obtained by the method of claim 5 is used as the parent substrate.

9. A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
preparing a plurality of large single-crystal diamond substrates having a substantially identical thickness according to the method of claim 1 ;
placing the large substrates on a flat support such that side faces of adjacent substrates are in contact with each other, directions of crystal faces are identical, and single-crystal diamond layers grown by a vapor-phase synthesis method in Step (4) of claim 1 are exposed as top faces; and
growing a single-crystal diamond thereon by a vapor-phase synthesis method, thereby bonding the plurality of large substrates.

10. A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
preparing a plurality of large single-crystal diamond substrates having a substantially identical thickness according to the method of claim 2 ;
placing the large substrates on a flat support such that side faces of adjacent substrates are in contact with each other, directions of crystal faces are identical, and single-crystal diamond layers grown by a vapor-phase synthesis method in Step (4) are exposed as top faces; and
growing a single-crystal diamond thereon by a vapor-phase synthesis method, thereby bonding the plurality of large substrates.

11. A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
preparing a plurality of large single-crystal diamond substrates having a substantially identical thickness according to the method of claim 5 ;
placing the large substrates on a flat support such that side faces of adjacent substrates are in contact with each other, directions of crystal faces are identical, and single-crystal diamond layers grown by a vapor-phase synthesis method in Step (5) of claim 5 are exposed as top faces; and
growing a single-crystal diamond thereon by a vapor-phase synthesis method, thereby bonding the plurality of large substrates.

12. A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
preparing a plurality of large single-crystal diamond substrates having a substantially identical thickness according to the method of claim 6 ;
placing the large substrates on a flat support such that side faces of adjacent substrates are in contact with each other, directions of crystal faces are identical, and single-crystal diamond layers grown by a vapor-phase synthesis method in Step (5) are exposed as top faces; and
growing a single-crystal diamond thereon by a vapor-phase synthesis method, thereby bonding the plurality of large substrates.

Assignees

• Hideaki Yamada
• Chayahara Akiyoshi
• Mokuno Yoshiaki
• Shikata Shinichi
• Nat Inst Of Advanced Ind Scien

Inventors

• Yamada Hideaki
• Chayahara Akiyoshi
• Mokuno Yoshiaki
• Shikata Shinichi

Classifications

• C01B32/28

  After-treatment, e.g. purification, irradiation, separation or recovery · CPC title

• C30B25/00

  Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• C30B33/06

  Joining of crystals · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title