Memory Device Having Oxygen Control Layers And Manufacturing Method Of Same
US-2015372228-A1 · Dec 24, 2015 · US
Method of manufacturing nonvolatile memory device
US8927331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8927331-B2 |
| Application number | US-201213997818-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 9, 2012 |
| Priority date | Mar 10, 2011 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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A method of manufacturing a nonvolatile memory device includes: forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of manufacturing a nonvolatile memory device, the method comprising: forming a first oxide material layer comprising an oxygen-deficient transition metal oxide; forming a second oxide material layer comprising a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide material layer; and exposing the second oxide material layer to plasma after the forming of a second oxide…
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Electricity · mapped topic
Electricity · mapped topic
- H01L45/1641Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8927331B2 cover?
- A method of manufacturing a nonvolatile memory device includes: forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalu…
- Who is the assignee on this patent?
- Takahashi Ichirou, Mikawa Takumi, Panasonic Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1641. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).