Resistive-switching memory elements having improved switching characteristics

Patent metadata

Field	Value
Publication number	US-9178146-B2
Application number	US-201313974967-A
Country	US
Kind code	B2
Filing date	Aug 23, 2013
Priority date	Mar 10, 2008
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

First claim

What is claimed is:

1. A resistive-switching memory element comprising:
a first electrode and a second electrode;
a switching layer between the first electrode and the second electrode,
wherein the switching layer comprises hafnium oxide and has a first thickness,
wherein the switching layer comprises a first portion and a second portion,
wherein the first portion of the switching layer comprises an oxygen deficient metal oxide,
wherein the second portion of the switching…

Assignees

• Intermolecular Inc

Inventors

• Kuse Ronald J
• Chiang Tony P
• Hashim Imran

Classifications

• H01L45/1253

  Electricity · mapped topic

• H01L45/10

  Electricity · mapped topic

• H01L27/2481

  Electricity · mapped topic

• H01L45/1641

  Electricity · mapped topic

• H01L27/2409

  Electricity · mapped topic