Method for forming ReRAM chips operating at low operating temperatures

Patent metadata

Field	Value
Publication number	US-9177996-B2
Application number	US-201314072611-A
Country	US
Kind code	B2
Filing date	Nov 5, 2013
Priority date	Mar 14, 2013
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

Forming a resistive memory structure at a temperature well above the operating temperature can reduce the forming voltage and create a defect distribution with higher stability and lower programming voltages. The forming temperature can be up to 200 C above the operating temperature. The memory chip can include an embedded heater in the chip package, allowing for a chip forming process after packaging.

First claim

What is claimed is:

1. A method comprising
forming a memory structure, wherein the memory structure comprises an insulator layer disposed between two electrode layers;
heating the memory structure to a temperature higher than an operating temperature of the memory structure;
applying a first voltage to the two electrode layers to form a switching layer from the insulator layer;
stopping heating the memory structure.

2. A method as in claim 1 wherein t…

Assignees

• Intermolecular Inc

Inventors

• Pramanik Dipankar
• Chiang Tony P

Classifications

• H10P95/90

  Electricity · mapped topic

• H10P74/277

  Electricity · mapped topic

• H10P74/203

  Electricity · mapped topic

• H10P14/69394

  Electricity · mapped topic

• H10P14/69393

  Electricity · mapped topic