Method of sustaining plasma for plasma processing

Patent metadata

Field	Value
Publication number	US-2026066226-A1
Application number	US-202418819736-A
Country	US
Kind code	A1
Filing date	Aug 29, 2024
Priority date	Aug 29, 2024
Publication date	Mar 5, 2026
Grant date	—

Abstract

A method for plasma processing a substrate includes: sustaining a plasma in a plasma processing chamber, the plasma processing chamber including a first electrode and a second electrode, where sustaining the plasma includes: coupling a source signal to the first electrode; and applying a bias signal to the second electrode, the bias signal having a spike waveform including a plurality of bias pulses, each of the bias pulses including a DC base voltage for a base duration and a triangular voltage spike having a rise time from the base voltage to a peak voltage and a fall time from the peak voltage to the base voltage, a sum of the rise time, the fall time, and the base duration including a pulse period, the applying including: independently adjusting the rise time and fall time to obtain a narrow energy spread of a mode at a high modal energy in an ion energy distribution function (IEDF) of an ion flux incident on the substrate, the narrow energy spread including a first width of the high energy mode of the IEDF that is smaller than a second width of the high energy mode of the IEDF obtainable using a rectangular pulse waveform.

First claim

What is claimed is:

1 . A method for plasma processing a substrate, the method comprising:
sustaining a plasma in a plasma processing chamber, the plasma processing chamber comprising a first electrode and a second electrode, wherein sustaining the plasma comprises:
coupling a source signal to the first electrode; and
applying a bias signal to the second electrode, the bias signal having a spike waveform comprising a plurality of bias pulses, each of the bias pulses comprising a DC base voltage for a base duration and a triangular voltage spike having a rise time from the base voltage to a peak voltage and a fall time from the peak voltage to the base voltage, a sum of the rise time, the fall time, and the base duration comprising a pulse period, the applying comprising:
independently adjusting the rise time and fall time to obtain a narrow energy spread of a mode at a high modal energy in an ion energy distribution function (IEDF) of an ion flux incident on the substrate, the narrow energy spread comprising a first width of the high energy mode of the IEDF that is smaller than a second width of the high energy mode of the IEDF obtainable using a rectangular pulse waveform.

2 . The method of claim 1 , wherein applying the bias signal further comprises:
changing the high modal energy of the IEDF independently from changing a magnitude of the ion flux by changing the peak voltage independently from changing the pulse period, wherein changing the pulse period comprises changing the base duration.

3 . The method of claim 1 , wherein the source signal comprises a continuous wave radio frequency (RF) waveform, and wherein the plurality of bias pulses of the spike waveform comprises a continuous train of bias pulses.

4 . The method of claim 1 , wherein the source signal comprises a continuous wave RF waveform, and wherein the plurality of bias pulses of the spike waveform is divided into a plurality of bursts, each burst comprising a concatenation of bias pulses, the bias signal having an ON state comprising the plurality of bursts and an OFF state between consecutive bursts.

5 . The method of claim 1 , wherein the source signal comprises a pulsed RF waveform comprising a plurality of RF pulses, the source signal having an ON state comprising the RF pulses and an OFF state with no RF power between consecutive RF pulses, and wherein the plurality of bias pulses of the spike waveform comprises a continuous train of bias pulses.

6 . The method of claim 1 , wherein the source signal comprises a pulsed RF waveform comprising a plurality RF pulses, the source signal having an ON state comprising the RF pulses and an OFF state with no RF power between consecutive RF pulses, and wherein the plurality of bias pulses of the spike waveform is divided into a plurality of bursts, wherein each of the bursts comprises a concatenation of bias pulses, the bias signal having an ON state comprising the plurality of bursts and an OFF state with no bursts between consecutive bursts.

7 . The method of claim 6 , wherein the ON state of the source signal is in phase with the ON state of the bias signal, and wherein the OFF state of the source signal is in phase with the OFF state of the bias signal.

8 . The method of claim 6 , wherein the ON state of the source signal is out of phase with the ON state of the bias signal, and wherein the OFF state of the source signal is out of phase with the OFF state of the bias signal.

9 . The method of claim 6 , wherein the ON state of the source signal partially overlaps with the ON state of the bias signal, and wherein the OFF state of the source signal partially overlaps with the OFF state of the bias signal.

10 . A method for plasma processing a substrate, the method comprising:
coupling a source signal to a first electrode of a plasma processing chamber; and applying a bias signal to a second electrode of the plasma processing chamber, the bias signal having a spike waveform comprising a plurality of bias pulses, each of the bias pulses comprising a DC base voltage for a base duration and a triangular voltage spike having a rise time from the base voltage to a peak voltage and a fall time from the peak voltage to the base voltage, a sum of the rise time, the fall time, and the base duration comprising a pulse period, the applying comprising:
independently adjusting the rise time and fall time to obtain a narrow energy spread of a mode at a high modal energy in an ion energy distribution function (IEDF) of an ion flux incident on the substrate, the narrow energy spread comprising a first width of the high energy mode of the IEDF that is smaller than a second width of the high energy mode of the IEDF obtainable using a rectangular pulse waveform, wherein the plurality of bias pulses of the spike waveform comprises a first plurality of first bias pulses having a first peak voltage and a second plurality of second bias pulses having a second peak voltage different from the first peak voltage.

11 . The method of claim 10 , wherein the bias signal comprises an ON state comprising the plurality of bias pulses and an OFF state with no bias pulses.

12 . The method of claim 10 , wherein the source signal comprises a pulsed waveform comprising a plurality of source pulses, wherein the plurality of source pulses comprises a first plurality of first source pulses having a first amplitude and a second plurality of second source pulses having a second amplitude different from the first amplitude.

13 . The method of claim 12 , wherein the bias signal comprises an ON state comprising the plurality of bias pulses and an OFF state with no bias pulses.

14 . The method of claim 12 , wherein the source signal comprises an ON state comprising the plurality of source pulses and an OFF state with no source pulses.

15 . The method of claim 12 , wherein the first plurality of first source pulses is a plurality of first sinusoidal RF pulses and the second plurality of second source pulses is a plurality of second sinusoidal RF pulses.

16 . The method of claim 12 , wherein the first plurality of first bias pulses is synchronized with the first plurality of first source pulses and the second plurality of second bias pulses is synchronized with the second plurality of second source pulses.

17 . The method of claim 12 , wherein the first amplitude is larger than the second amplitude, and the first peak voltage is larger than the second peak voltage.

18 . The method of claim 12 , wherein the first amplitude is larger than the second amplitude, and the first peak voltage is smaller than the second peak voltage.

19 . A plasma processing apparatus comprising:
a plasma processing chamber to sustain a plasma, the plasma processing chamber comprising:
a first electrode configured to receive a source signal; and
a second electrode configured to receive a bias signal;
a controller; and a memory coupled to the controller and storing instructions to be executed in the controller, the instructions when executed by the controller cause the apparatus to:
couple the source signal from a first electrical circuit to the first electrode; and
apply the bias signal from a second electrical circuit to the second electrode, the bias signal having a spike waveform comprising a plurality of bias pulses, each of the bias pulses comprising a pulse period and a voltage spike having a rise time from a base voltage to a peak voltage and a fall time from the peak voltage to the base voltage, wherein the instructions to apply comprises instructi

Assignees

• Tokyo Electron Ltd

Inventors

• Chen Zhiying
• Carruth Megan
• Blakeney Joel
• Ventzek Peter Lowell George
• Sridhar Shyam
• Ohata Mitsunori

Classifications

• H01J37/32706

  Polarising the substrate · CPC title

• H01J37/32128

  using particular waveforms, e.g. polarised waves · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title

• H10P72/0421

  for drying etching · CPC title

• H01J2237/3341

  Reactive etching · CPC title