Refractory components for a semiconductor processing chamber

US2025372351A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2025372351-A1
Application numberUS-202319120431-A
CountryUS
Kind codeA1
Filing dateOct 9, 2023
Priority dateOct 31, 2022
Publication dateDec 4, 2025
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A component for use in a semiconductor processing chamber is provided. A component body has a process facing surface, wherein the component body comprises at least one of iron, iron alloy, nickel, nickel alloy, titanium, and titanium alloy. A coating is over the process facing surface, wherein the coating comprises at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, wherein the coating is at least 99% by weight pure and has a porosity of less than 0.1%.

First claim

Opening claim text (preview).

What is claimed is: 1 . A component for use in a semiconductor processing chamber, comprising: a component body with a process facing surface, wherein the component body comprises at least one of iron, iron alloy, nickel, nickel alloy, titanium, and titanium alloy; and a coating over the process facing surface, wherein the coating comprises at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, wherein the coating is at least 99% by weight pure and has a porosity of less than 0.1%. 2 . The component, as recited in claim 1 , wherein the coating has a thickness in a range of 50 nm to 6000 nm. 3 . The component, as recited in claim 1 , wherein the coating is in direct contact with the process facing surface of the component body. 4 . The component, as recited in claim 1 , further comprising an aluminum layer between the process facing surface of the component body and the coating. 5 . The component, as recited in claim 1 , further comprising a thermal uniformity cladding over a surface of the component body that is not a process facing surface. 6 . The component, as recited in claim 5 , wherein the thermal uniformity cladding comprises aluminum. 7 . The component, as recited in claim 5 , further comprising a temperature control system for controlling a temperature of the thermal uniformity cladding. 8 . The component, as recited in claim 1 , wherein the component body comprises a stainless steel that is resistant to corrosion from halogen containing plasma. 9 . The component, as recited in claim 1 , wherein the component body comprises at least one of Ti-6A1-4V, NSA, SAE 316L grade stainless steel, and AL-6XN stainless steel. 10 . The component, as recited in claim 1 , wherein the coating comprises at least one of yttria, yttrium trifluoride, hafnium oxide, yttrium aluminum oxide, lanthanide oxide, and lanthanide fluoride. 11 . The component, as recited in claim 1 , wherein the component body comprises stainless steel. 12 . The component, as recited in claim 1 , wherein the component body comprises a titanium alloy. 13 . A method for making a component for use in a semiconductor processing chamber, comprising: providing a component body comprising at least one of iron, iron alloy, nickel, nickel alloy, titanium, and titanium alloy with a process facing surface; and providing an atomic layer deposition coating over the process facing surface of the component body, wherein the atomic layer deposition coating comprises at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride. 14 . The method, as recited in claim 13 , further comprising depositing an aluminum layer over the process facing surface of the component body before providing the atomic layer deposition coating over the process facing surface of the component body. 15 . The method, as recited in claim 14 , wherein the depositing the aluminum layer comprises depositing the aluminum layer by at least one of electroplating and cold spraying on the process facing surface before providing the atomic layer deposition. 16 . The method, as recited in claim 13 , further comprising providing a thermal uniformity cladding over a surface of the component body that is not a process facing surface. 17 . The method, as recited in claim 16 , wherein the thermal uniformity cladding comprises aluminum. 18 . The method, as recited in claim 13 , further comprising providing a temperature control system for controlling a temperature of the component body. 19 . The method, as recited in claim 13 , wherein the component body comprises a stainless steel that is resistant to corrosion from halogen containing plasma. 20 . The method, as recited in claim 13 , wherein the component body comprises at least one of Ti-6A1-4V, NSA, SAE 316L grade stainless steel, and AL-6XN stainless steel. 21 . The method, as recited in claim 13 , wherein the component body comprises stainless steel. 22 . The method, as recited in claim 13 , wherein the component body comprises a titanium alloy.

Assignees

Inventors

Classifications

  • with at least one oxide layer · CPC title

  • including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates · CPC title

  • including at least one pure metallic layer · CPC title

  • of refractory metals or yttrium · CPC title

  • Oxides · CPC title

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What does patent US2025372351A1 cover?
A component for use in a semiconductor processing chamber is provided. A component body has a process facing surface, wherein the component body comprises at least one of iron, iron alloy, nickel, nickel alloy, titanium, and titanium alloy. A coating is over the process facing surface, wherein the coating comprises at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, wherei…
Who is the assignee on this patent?
Lam Res Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/32477. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Dec 04 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).