Atomic layer deposition apparatus

Patent metadata

Field	Value
Publication number	US-2025369112-A1
Application number	US-202519020593-A
Country	US
Kind code	A1
Filing date	Jan 14, 2025
Priority date	May 30, 2024
Publication date	Dec 4, 2025
Grant date	—

Abstract

An atomic layer deposition apparatus includes: a substrate mounting plate configured to have a substrate mounted thereon; a housing including an internal space in which the substrate mounting plate is accommodated; a reactant supplier including a plurality of regions respectively corresponding to a plurality of zones of the substrate; and a product measurer configured to measure a thickness of a product deposited on each of the plurality of zones, wherein the housing further includes a plurality of supply holes respectively corresponding to the plurality of regions and configured to allow a reactant to pass into the internal space from the reactant supplier, and the reactant supplier is configured to supply the reactant to the plurality of zones through the plurality of regions and the plurality of supply holes.

First claim

What is claimed is:

1 . An atomic layer deposition apparatus comprising:
a substrate mounting plate configured to have a substrate mounted thereon; a housing comprising an internal space in which the substrate mounting plate is accommodated; a reactant supplier comprising a plurality of regions respectively corresponding to a plurality of zones of the substrate; and a product measurer configured to measure a thickness of a product deposited on each of the plurality of zones, wherein the housing further comprises a plurality of supply holes respectively corresponding to the plurality of regions and configured to allow a reactant to pass into the internal space from the reactant supplier, and wherein the reactant supplier is configured to supply the reactant to the plurality of zones through the plurality of regions and the plurality of supply holes.

2 . The atomic layer deposition apparatus of claim 1 , wherein the reactant supplier comprises a reactant source and a plurality of reactant supply lines connected to the reactant source and connected to the plurality of regions.

3 . The atomic layer deposition apparatus of claim 2 , further comprising a controller connected to the reactant supplier and the product measurer.

4 . The atomic layer deposition apparatus of claim 3 , wherein the controller is configured to control an amount of the reactant supplied by the reactant supplier to at least one of the plurality of zones based on the measured thickness of the product deposited on at least one of the plurality of zones.

5 . The atomic layer deposition apparatus of claim 4 , wherein the controller is further configured to control the reactant supplier to change at least one of the amount of the reactant supplied to at least one of the plurality of regions and an amount of time the reactant is supplied to at least one of the plurality of regions.

6 . The atomic layer deposition apparatus of claim 1 , wherein each of the plurality of supply holes comprises a precursor spray hole and an agent spray hole adjacent to the precursor spray hole.

7 . The atomic layer deposition apparatus of claim 2 , wherein the reactant supplier further comprises a cover member covering the plurality of supply holes, wherein the cover member is divided into the plurality of regions, and
wherein the plurality of reactant supply lines are respectively connected to the plurality of regions of the cover member.

8 . The atomic layer deposition apparatus of claim 1 , wherein the housing comprises at least one partition wall dividing the plurality of supply holes into the plurality of regions.

9 . The atomic layer deposition apparatus of claim 1 , wherein the product measurer comprises a plurality of optical sensors configured to respectively measure the thickness of the product deposited on the plurality of zones.

10 . The atomic layer deposition apparatus of claim 3 , wherein the controller is configured to control the reactant supplier to adjust an amount of the reactant that is supplied based on a comparison of a preset reference amount with the measured thickness of the product deposited on each of the plurality of zones.

11 . An atomic layer deposition apparatus comprising:
a substrate mounting plate configured to have a substrate mounted thereon; a housing comprising an internal space in which the substrate mounting plate is accommodated; a reactant supplier comprising a plurality of regions which respectively correspond to a plurality of zones of the substrate; and a product measurer configured to measure a thickness of a product deposited on each of the plurality of zones, wherein the housing further comprises a plurality of supply holes respectively corresponding to the plurality of regions and configured to allow a reactant to pass into the internal space from the reactant supplier, wherein the reactant supplier further comprises a reactant source, a plurality of reactant supply lines connected to the reactant source and respectively connected to the plurality of regions, and a cover member covering the plurality of supply holes, wherein the cover member is divided into the plurality of regions, and wherein the plurality of reactant supply lines are respectively connected to the plurality of regions of the cover member.

12 . The atomic layer deposition apparatus of claim 11 , further comprising a controller connected to the reactant supplier and the product measurer.

13 . The atomic layer deposition apparatus of claim 12 , wherein the controller is configured to control the reactant supplier to adjust an amount of the reactant supplied to at least one of the plurality of zones based on the measured thickness of the product deposited on at least one of the plurality of zones.

14 . The atomic layer deposition apparatus of claim 13 , wherein the controller is further configured to control the reactant supplier to change at least one of the amount of the reactant supplied to at least one of the plurality of regions and an amount of time the reactant is supplied to at least one of the plurality of regions.

15 . The atomic layer deposition apparatus of claim 11 , wherein each of the plurality of supply holes comprises a precursor spray hole and an agent spray hole adjacent to the precursor spray hole.

16 . The atomic layer deposition apparatus of claim 11 , wherein the product measurer comprises a plurality of optical sensors configured to respectively measure the thickness of the product deposited on the respective zones among the plurality of zones.

17 . The atomic layer deposition apparatus of claim 12 , wherein the controller is configured to control the reactant supplier to adjust an amount of the reactant that is supplied based on a comparison of a present reference amount with the measured thickness of the product deposited on each of the plurality of zones.

18 . An atomic layer deposition apparatus comprising:
a substrate mounting plate configured to have a substrate mounted thereon; a housing comprising an internal space in which the substrate mounting plate is accommodated; a reactant supplier configured to supply a reactant to be deposited on the substrate; and a product measurer configured to measure a thickness of a product deposited on the substrate, wherein the housing further comprises a plurality of supply holes configured to allow the reactant to pass into the internal space, and wherein the product measurer comprises a plurality of optical sensors configured to respectively measure the thickness of the product deposited on each of a plurality of zones of the substrate.

19 . The atomic layer deposition apparatus of claim 18 , wherein the reactant supplier comprises a reactant source and a plurality of reactant supply lines connected to the reactant source and respectively connected to a plurality of divided regions of the reactant supplier.

20 . The atomic layer deposition apparatus of claim 19 , further comprising a controller connected to the reactant supplier and the product measurer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jinyoung
• KIM SungHyup
• Nam Yebin
• Lee Sukwon

Classifications

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/45544 Primary

  characterized by the apparatus · CPC title

• C23C16/458 Primary

  characterised by the method used for supporting substrates in the reaction chamber · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title