Sealed bonded structures and methods for forming the same

Patent metadata

Field	Value
Publication number	US-2025349773-A1
Application number	US-202519274354-A
Country	US
Kind code	A1
Filing date	Jul 18, 2025
Priority date	Jun 12, 2019
Publication date	Nov 13, 2025
Grant date	—

Abstract

A bonded structure is disclosed. The bonded structure includes a first element that has a front side and a back side that is opposite the front side. The first element has a first conductive pad and a first nonconductive field region at the front side of the first element. The bonded structure also includes a second element that has a second conductive pad and a second nonconductive field region at a front side of the second element. The second conductive pad is bonded to the first conductive pad along an interface structure. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The bonded structure further includes an elongate conductive structure that extends from the back side of the first element to the interface structure. The elongate conductive structure provides an effectively closed profile around the integrated device.

First claim

What is claimed is:

1 . A bonded structure comprising:
a first bulk region; a second bulk region; an interface structure between the first bulk region and the second bulk region, wherein the interface structure comprises a plurality of directly bonded conductive contact pads, and wherein the interface structure comprises a first nonconductive field region adjacent to the first bulk region and a second nonconductive field region adjacent to the second bulk region; an integrated device coupled to the interface structure; and a channel extending from a back side of the first bulk region and through at least a portion of the first nonconductive field region, wherein a conductive material is disposed in the channel, and wherein the channel comprises an at least partially annular pattern about the integrated device.

2 . The bonded structure of claim 1 , wherein the first nonconductive field region and the second nonconductive field region are directly bonded without an intervening adhesive.

3 . The bonded structure of claim 1 , further comprising a cavity, the channel extending at least partially around the cavity.

4 . The bonded structure of claim 1 , wherein the channel defines a completely closed profile.

5 . The bonded structure of claim 1 , further comprising a first bonding layer disposed over the first bulk region and a second bonding layer disposed over the second bulk region, wherein the first bonding layer comprises a first conductive contact pad at least partially embedded in the first nonconductive field region, wherein the second bonding layer comprises a second conductive contact pad at least partially embedded in the second nonconductive field region, wherein the plurality of directly bonded conductive contact pads comprises the first conductive contact pad directly bonded to the second conductive contact pad, and wherein the channel contacts the first conductive contact pad.

6 . The bonded structure of claim 1 , further comprising a first bonding layer disposed over the first bulk region and a second bonding layer disposed over the second bulk region, wherein the first bonding layer comprises a first conductive contact pad at least partially embedded in the first nonconductive field region, wherein the second bonding layer comprises a second conductive contact pad at least partially embedded in the second nonconductive field region, wherein the plurality of directly bonded conductive contact pads comprises the first conductive contact pad directly bonded to the second conductive contact pad, and wherein the channel extends through the interface structure to contact the second conductive contact pad.

7 . The bonded structure of claim 1 , wherein the channel extends at least partially through the second nonconductive field region.

8 . The bonded structure of claim 1 , wherein the channel extends through an entire thickness of the bonded structure.

9 . The bonded structure of claim 1 , further comprising a lateral feature at least partially embedded in the second nonconductive field region, the channel extending through at least a portion of the second nonconductive field region to contact the lateral feature.

10 . The bonded structure of claim 9 , wherein the lateral feature comprises a ring disposed around the integrated device.

11 . The bonded structure of claim 1 , wherein the channel is exposed on an outermost surface of the bonded structure.

12 . A bonded structure comprising:
a first element having a front side and a back side opposite the front side, the first element having a first plurality of contact pads and a first dielectric material at the front side of the first element, the first dielectric material and the first plurality of contact pads disposed on a semiconductor region of the first element; a second element having a second plurality of contact pads and a second dielectric material at a front side of the second element, the second plurality of contact pads directly bonded and electrically connected to the first plurality of contact pads without an intervening adhesive; an integrated device disposed in an interior region of the bonded structure; and a trench extending from the back side of the first element, through the semiconductor region and the first dielectric material, and at least to a bonding interface between the first element and the second element, wherein a conductive material is disposed in the trench, and wherein the conductive material comprises an at least partially annular pattern about the integrated device.

13 . The bonded structure of claim 12 , wherein the first dielectric material and the second dielectric material are directly bonded without an intervening adhesive.

14 . The bonded structure of claim 12 , wherein the trench electrically contacts a contact pad of the second plurality of contact pads.

15 . The bonded structure of claim 12 , further comprising a via extending at least partially through the first element from the back side of the first element, the via being in contact with a first contact pad of the first plurality of contact pads.

16 . The bonded structure of claim 12 , wherein the trench extends continuously about the integrated device, and wherein the conductive material comprises a closed annular pattern about the integrated device.

17 . The bonded structure of claim 12 , wherein the conductive material conforms to a surface of the trench.

18 . The bonded structure of claim 12 , wherein the conductive material fills the trench.

19 . The bonded structure of claim 12 , wherein the first plurality of contact pads and the second plurality of contact pads are laterally inset relative to the trench.

20 . The bonded structure of claim 12 , wherein at least one of the first dielectric material or the second dielectric material comprises silicon.

Assignees

• Adeia Semiconductor Bonding Technologies Inc

Inventors

• Katkar Rajesh
• Sitaram Arkalgud R
• Mirkarimi Laura Wills

Classifications

• H10W90/792

  between multiple chips · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/016

  Cleaning · CPC title

• H10W80/00

  Direct bonding of chips, wafers or substrates · CPC title