Adhesive composition for release by light irradiation, laminate, and method for producing processed semiconductor substrate

Patent metadata

Field	Value
Publication number	US-2025316522-A1
Application number	US-202318870061-A
Country	US
Kind code	A1
Filing date	May 25, 2023
Priority date	Jun 2, 2022
Publication date	Oct 9, 2025
Grant date	—

Abstract

A laminate including an adhesive layer that has both a bonding function and a releasing function in a single layer and can be released through light irradiation, an adhesive composition for forming the releasable adhesive layer, and a method for producing a processed semiconductor substrate using the laminate. The adhesive composition includes an adhesive component and a release agent component, wherein the adhesive component contains a polysiloxane resin, and the release agent component contains a (meth)acrylic polymer including a silicone-based first unit and a light-absorbing structured second unit.

First claim

1 . An adhesive composition for release by light irradiation for forming an adhesive layer of a laminate including a semiconductor substrate, a support substrate, and the adhesive layer provided between the semiconductor substrate and the support substrate, and the laminate being used for releasing the semiconductor substrate and the support substrate each other after the adhesive layer absorbs light emitted from a side of the support substrate,
the adhesive composition comprising: an adhesive component (S); and a release agent component (R), wherein the adhesive component (S) contains a polysiloxane resin, and the release agent component (R) contains a (meth)acrylic polymer including a silicone-based first unit and a light-absorbing structured second unit.

2 . The adhesive composition according to claim 1 , wherein the silicone-based first unit is represented by any one of the following Formulae (A-1) and (A-2):

where Rb represents a hydrogen atom or a methyl group, Rc and Rd each independently represent a hydrogen atom, an alkyl group, or a phenyl group, and m and p each independently represent an integer of 0 or more.

3 . The adhesive composition according to claim 1 , wherein the light-absorbing structured second unit has a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, an anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, a phenylbenzotriazole structure, an acenaphthene structure, and a cinnamic acid-derived structure.

4 . The adhesive composition according to claim 3 , wherein the light-absorbing structured second unit has a structure represented by any one of the following Formulae (1) to (9):

where R 1 to R 13 each independently represent a halogen atom or a monovalent group,
X represents a single bond, —O—, —CO—, —NR 31 —(R 31 represents a hydrogen atom, an optionally substituted alkyl group, or an optionally substituted aryl group.), —SO—, —SO 2 —, or —N═N—,
Y 1 represents a single bond or —CO—,
when Y 1 is a single bond, Y 2 represents —O—, —CO—, or —NR 32 —(R 32 represents a hydrogen atom, an optionally substituted alkyl group, or an optionally substituted aryl group.),
when Y 1 is —CO—, Y 2 represents —CO—,
n1 is an integer of 0 to 4,
n2 is an integer of 0 to 5,
n3 is an integer of 0 to 3,
n4 is an integer of 0 to 4,
n5 is an integer of 0 to 4,
n6 is an integer of 0 to 5,
n7 is an integer of 0 to 4,
n8 is an integer of 0 to 4,
n9 is an integer of 0 to 7,
n10 is an integer of 0 to 9,
n11 is an integer of 0 to 9,
n12 is an integer of 0 to 4,
n13 is an integer of 0 to 4,
each asterisk * represents a bonding hand, and
when a plurality of R 1 to R 13 is present, each of the plurality of R 1 to R 13 may be identical to or different from one another.

5 . The adhesive composition according to claim 4 , wherein the light-absorbing structured second unit is represented by any one of the following Formulae (B-1) to (B-5):

6 . The adhesive composition according to claim 1 , wherein the polysiloxane resin contained in the adhesive component (S) contains a component (A) that is cured.

7 . The adhesive composition according to claim 6 , wherein the component (A) that is cured is a component that is cured by a hydrosilylation reaction.

8 . The adhesive composition according to claim 7 , wherein the component (A) that is cured contains:
a polyorganosiloxane (a1) containing an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom; a polyorganosiloxane (a2) containing a Si—H group; and a platinum group metal-based catalyst (A2).

9 . The adhesive composition according to claim 1 , wherein the (meth)acrylic polymer contained in the release agent component (R) further contains a third unit represented by the following Formula (C-1) or (C-2):

where Rp represents a hydrogen atom or a methyl group, Rq represents a chain saturated hydrocarbon group having 3 or more carbon atoms, Rr represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having 6 or more carbon atoms, and r represents an integer of 0 or more.

10 . The adhesive composition according to claim 9 , wherein the third unit is represented by any one of the following Formulae (C-3) to (C-7):

11 . A laminate comprising:
a semiconductor substrate; a light-transmissive support substrate; and an adhesive layer provided between the semiconductor substrate and the support substrate, the laminate being used for releasing the semiconductor substrate and the support substrate each other after the adhesive layer absorbs light emitted from a side of the support substrate, wherein the adhesive layer is formed of the adhesive composition according to claim 1 .

12 . A method for producing a processed semiconductor substrate, the method comprising:
processing the semiconductor substrate of the laminate according to claim 11 ; and separating the processed semiconductor substrate and the support substrate from each other.

13 . The method for producing a processed semiconductor substrate according to claim 12 , wherein the separating includes irradiating the laminate with a laser from a side of the support substrate.

Assignees

• Nissan Chemical Corp

Inventors

• Okuno Takahisa
• Yanai Masaki
• Shinjo Tetsuya

Classifications

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7402 Primary

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title