Metal-containing film and method for producing metal-containing film

Patent metadata

Field	Value
Publication number	US-2025305147-A1
Application number	US-202218569248-A
Country	US
Kind code	A1
Filing date	Jun 6, 2022
Priority date	Jun 18, 2021
Publication date	Oct 2, 2025
Grant date	—

Abstract

A metal-containing film having a laminate structure that does not contain grain boundaries, wherein the laminate structure is formed by alternately laminating a first metal-containing unit film which has a thickness less than a crystal nucleation critical diameter, and a second metal-containing unit film which differs from the first metal-containing unit film and has a thickness less than the crystal nucleation critical diameter.

First claim

What is claimed is:

1 . A metal-containing film comprising a laminate structure that does not contain grain boundaries, wherein the laminate structure is formed by alternately laminating a first metal-containing unit film which has a thickness less than a crystal nucleation critical diameter, and a second metal-containing unit film which differs from the first metal-containing unit film and has a thickness less than the crystal nucleation critical diameter.

2 . The metal-containing film of claim 1 , wherein the first metal-containing unit film and the second metal-containing unit film are metal nitride films or metal films.

3 . The metal-containing film of claim 2 , wherein the first metal-containing unit film and the second metal-containing unit film are any one of a combination in which one is a metal nitride film and another one is a metal film, a combination in which both are the metal nitride films, and a combination in which both are the metal films.

4 . The metal-containing film of claim 3 , wherein the metal nitride film is selected from TiN, NbN, VN, WN, TaN, MON, and W 2 N 3 , and the metal film is selected from Ru, Co, Ni, Mo, W, Al, Ti, V, Mn, Si, and Mg.

5 . The metal-containing film of claim 3 or 4 , wherein the combination in which one is a metal nitride film and another one is a metal film is selected from TiN—W, TiN—Mo, TiN—Ru, TaN—W, TaN—Mo, and TaN—Ru.

6 . The metal-containing film of claim 3 or 4 , wherein the combination in which both are metal nitride films is selected from TiN—TaN, TiN—NbN, TiN—MoN, TiN—W 2 N 3 , TaN—NbN, and TaN—W 2 N 3 .

7 . The metal-containing film of claim 3 or 4 , wherein the combination in which both are metal films is selected from Si—Al, W—Al, Mg—Al, W—Ti, V—Ti, and Mg—Ti.

8 . The metal-containing film of any one of claims 1 to 4 , wherein an element that increases a degree of supercooling is added to at least one of the first metal-containing unit film and the second metal-containing unit film.

9 . The metal-containing film of claim 8 , wherein the element that increases the degree of supercooling has an interaction parameter of 0 or more with a parent phase material to which the element is added.

10 . The metal-containing film of claim 9 , wherein, when, of the first metal-containing unit film and the second metal-containing unit film, a metal-containing unit film to which the element that increases the degree of supercooling is added is an Al film, the element that increases the degree of supercooling is Si,
when, of the first metal-containing unit film and the second metal-containing unit film, the metal-containing unit film to which the element that increases the degree of supercooling is added is a Ru film, the element that increases the degree of supercooling is selected from Ir, Pd, Ni, Co, and Mn, when, of the first metal-containing unit film and the second metal-containing unit film, the metal-containing unit film to which the element that increases the degree of supercooling is added is a Co film, the element that increases the degree of supercooling is selected from Ni, Cu, Pd, and Ru, when, of the first metal-containing unit film and the second metal-containing unit film, the metal-containing unit film to which the element that increases the degree of supercooling is added is a W film, the element that increases the degree of supercooling is selected from Mo, Ta, Nb, Ti, and Mn, when, of the first metal-containing unit film and the second metal-containing unit film, the metal-containing unit film to which the element that increases the degree of supercooling is added is a Mo film, the element that increases the degree of supercooling is selected from W, Ta, Nb, Ti, and Mn, when, of the first metal-containing unit film and the second metal-containing unit film, the metal-containing unit film to which the element that increases the degree of supercooling is added is a Ti film, the element that increases the degree of supercooling is selected from Zr, Hf, V, W, Mo, Nb, and Ta, and when, of the first metal-containing unit film and the second metal-containing unit film, the metal-containing unit film to which the element that increases the degree of supercooling is added is a Mn film, the element that increases the degree of supercooling is selected from Ru, Fe, Mo, and W.

11 . The metal-containing film of any one of claims 1 to 4 , wherein the metal-containing film is used as a metal pillar-structured electrode or a cylinder-structured electrode.

12 . The metal-containing film of any one of claims 1 to 4 , wherein the metal-containing film is used as a barrier film.

13 . The metal-containing film of any one of claims 1 to 4 , wherein the metal-containing film is used as a wiring metal.

14 . The metal-containing film of any one of claims 1 to 4 , wherein the metal-containing film is used as a metal hard mask.

15 . A method for producing a metal-containing film having a laminate structure which does not contain grain boundaries, the method comprising:
forming a first metal-containing unit film having a film thickness less than a crystal nucleation critical diameter on a substrate; and forming a second metal-containing unit film which differs from the first metal-containing unit film and has a thickness less than a crystal nucleation critical diameter, wherein the forming the first metal-containing unit film and the forming the second metal-containing unit film are performed alternately.

16 . The method of claim 15 , wherein the first metal-containing unit film and the second metal-containing unit film are formed by one of PVD, ALD, and CVD.

17 . The method of claim 15 or 16 , wherein the first metal-containing unit film and the second metal-containing unit film are metal nitride films or metal films.

18 . The method of claim 17 , wherein the first metal-containing unit film and the second metal-containing unit film are any one of a combination in which one is a metal nitride film and another one is a metal film, a combination in which both are the metal nitride films, and a combination in which both are the metal films.

19 . The method of claim 15 or 16 , wherein an element that increases a degree of supercooling is added to at least one of the first metal-containing unit film and the second metal-containing unit film.

20 . The method of claim 19 , wherein the element that increases the degree of supercooling has an interaction parameter of 0 or more with a parent phase material to which the element is added.

Assignees

• Tokyo Electron Ltd

Inventors

• Akiyama Koji
• Tamura Chihiro
• Ashizawa Hiroaki

Classifications

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/01

  Manufacture or treatment · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H10P14/42

  using a gas or vapour · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title