Holder and vapor phase growth apparatus

Patent metadata

Field	Value
Publication number	US-2025084560-A1
Application number	US-202418958833-A
Country	US
Kind code	A1
Filing date	Nov 25, 2024
Priority date	May 30, 2022
Publication date	Mar 13, 2025
Grant date	—

Abstract

A holder according to an embodiment includes a portion containing non-oriented polycrystalline 3C-SiC on its surface. A substrate can be placed on the holder. In the non-oriented polycrystalline 3C-SiC, when a diffraction peak intensity of a (111) face of the 3C-SiC obtained by Out-of-Plane XRD measurement is 100, the diffraction peak intensity of a (400) face of the 3C-SiC is greater than 0, the diffraction peak intensity of a (331) face of the 3C-SiC is greater than 0, the diffraction peak intensity of a (420) face of the 3C-SiC is greater than 0, and the diffraction peak intensity of a (422) face of the 3C-SiC is greater than 0.

First claim

What is claimed is:

1 . A holder, comprising:
a portion containing non-oriented polycrystalline 3C-SiC on its surface, wherein a substrate can be placed on the holder, and in the non-oriented polycrystalline 3C-SiC, when a diffraction peak intensity of a (111) face of the 3C-SiC obtained by Out-of-Plane XRD measurement is 100, the diffraction peak intensity of a (400) face of the 3C-SiC is greater than 0, the diffraction peak intensity of a (331) face of the 3C-SiC is greater than 0, the diffraction peak intensity of a (420) face of the 3C-SiC is greater than 0, and the diffraction peak intensity of a (422) face of the 3C-SiC is greater than 0.

2 . The holder according to claim 1 ,
wherein, in the non-oriented polycrystalline 3C-SiC, when a diffraction peak intensity of a (111) face of the 3C-SiC obtained by the Out-of-Plane XRD measurement is 100, the diffraction peak intensity of a (200) face of the 3C-SiC is 10 or more and 40 or less, the diffraction peak intensity of a (220) face of the 3C-SiC is 25 or more and 50 or less, and the diffraction peak intensity of a (311) face of the 3C-SiC is 15 or more and 65 or less.

3 . The holder according to claim 1 ,
wherein the diffraction peak intensity of a (400) face of the 3C-SiC is 20 or less, the diffraction peak intensity of a (331) face of the 3C-SiC is 20 or less, the diffraction peak intensity of a (420) face of the 3C-SiC is 20 or less, and the diffraction peak intensity of a (422) face of the 3C-SiC is 20 or less.

4 . The holder according to claim 1 , further comprising:
an inner region; and an outer region with an annular shape surrounding the inner region and surrounding the substrate when the substrate is placed, wherein the portion is provided in the outer region.

5 . The holder according to claim 1 , further comprising:
a base member; and an annular member placed on an outer periphery of the base member, wherein the annular member includes the portion.

6 . The holder according to claim 5 ,
wherein the annular member includes a first member and a second member separable from the first member, and at least one of the first member and the second member includes the portion.

7 . The holder according to claim 6 ,
wherein the first member has an annular shape, the second member has an annular shape, and the second member surrounds the first member.

8 . The holder according to claim 7 ,
wherein the first member includes the portion, and the second member does not include the portion.

9 . A vapor phase growth apparatus, comprising:
the holder according to claim 1 .

Assignees

• Nuflare Technology Inc

Inventors

• Watanabe Toru
• Daigo Yoshiaki
• Yajima Masayoshi

Classifications

• H10P72/70

  for supporting or gripping · CPC title

• H10P14/29

  characterised by the substrates · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• C23C16/4582

  Rigid and flat substrates, e.g. plates or discs (C23C16/4581 takes precedence) · CPC title

• C23C16/4581

  characterised by material of construction or surface finish of the means for supporting the substrate · CPC title