Semiconductor packages with patterns of die-specific information
US-12131916-B2 · Oct 29, 2024 · US
US2025054776A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025054776-A1 |
| Application number | US-202418928521-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 28, 2024 |
| Priority date | Aug 22, 2019 |
| Publication date | Feb 13, 2025 |
| Grant date | — |
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Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) a pattern positioned in a designated area of the first surface. The pattern includes multiple bit areas. Each of the bit areas represents a first bit information or a second bit information. the pattern presents information for operating the semiconductor die. The pattern is configured to be read by a pattern scanner.
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What is claimed is: 1 . A method of forming a semiconductor device package, the method comprising: positioning a semiconductor die between a first surface of the package and a second surface of the package that is opposite the first surface; forming a pattern in a designated area of the first surface, the pattern including multiple bit areas, each of the bit areas representing a first bit information or a second bit information, the pattern presenting information for operating the semiconductor die, the pattern being configured to be read by a pattern scanner. 2 . The method of claim 1 , wherein each of the bit areas includes a square shape, a triangular shape, and/or a parallelogram shape, and wherein each of the bit area includes at least one dot or at least one vacant region. 3 . The method of claim 1 , wherein the first bit information includes a value of one, and wherein the second bit information includes a value of zero. 4 . The method of claim 1 , wherein the pattern includes at least one serpentine line formed by multiple dots, and wherein a first segment of the at least one serpentine line represents the first bit information, and wherein a second segment of the at least one serpentine line represents the second bit information. 5 . The method of claim 4 , wherein the first segment of the at least one serpentine line is a horizontal segment, and wherein the second segment of the at least one serpentine line is a vertical segment or a diagonal segment. 6 . The method of claim 4 , wherein the first segment of the at least one serpentine line is a diagonal segment, and wherein the second segment of the at least one serpentine line is a horizontal segment. 7 . The method of claim 1 , wherein the pattern includes a horizontal reference line and a vertical reference line configured to indicate boundaries of the pattern. 8 . The method of claim 1 , wherein the pattern includes a reference configured to a starting point and/or an ending point for the pattern scanner to read the pattern. 9 . The method of claim 1 , wherein each of the bit areas includes a first segment representing the first bit information or a second segment representing the second bit information. 10 . The method of claim 9 , wherein the first segment includes a horizontal segment, and wherein the second segment includes a vertical segment. 11 . The method of claim 9 , wherein each of the bit areas includes a third segment representing a third bit information. 12 . The method of claim 11 , wherein each of the first segment, the second segment, and third segment includes at least one of a horizontal segment, a vertical segment, and a diagonal segment. 13 . The method of claim 1 , wherein each of the bit areas includes a first dot representing the first bit information and a second dot representing the second bit information, and wherein the first dot is larger than the second dot. 14 . A method of forming a semiconductor device, the method comprising: forming a machine-readable pattern on an external surface of the semiconductor device, the pattern representing information for operating the semiconductor device, wherein the pattern includes a plurality of bit areas, and wherein each of plurality of bit areas includes at least one dot or at least one vacant region. 15 . The method of claim 14 , wherein the plurality of bit areas each have a shape that is triangular, rectangular, or parallelogram. 16 . The method of claim 14 , wherein the pattern includes at least one serpentine line formed by multiple dots, and wherein a first segment of the at least one serpentine line represents a first bit of information, and wherein a second segment of the at least one serpentine line represents a second bit of information. 17 . A method of reading information from a semiconductor device, the method comprising: scanning, with a pattern scanner, a machine-readable pattern on an external surface of the semiconductor device, the pattern representing information for operating the semiconductor device, wherein the pattern includes a plurality of bit areas, and wherein each of plurality of bit areas includes at least one dot or at least one vacant region. 18 . The method of claim 17 , wherein the plurality of bit areas each have a shape that is triangular, rectangular, or parallelogram. 19 . The method of claim 17 , wherein the pattern includes at least one serpentine line formed by multiple dots, and wherein a first segment of the at least one serpentine line represents a first bit of information, and wherein a second segment of the at least one serpentine line represents a second bit of information. 20 . The method of claim 17 , wherein the pattern includes a reference configured to a starting point and/or an ending point for the pattern scanner to read the pattern.
Cutting or separating of wafers, substrates or parts of devices · CPC title
Subject matter not provided for in other groups of this subclass · CPC title
using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title
Encapsulations, e.g. protective coatings · CPC title
batch processes · CPC title
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