Defect inspection method and defect inspection system

Patent metadata

Field	Value
Publication number	US-2025027886-A1
Application number	US-202318356193-A
Country	US
Kind code	A1
Filing date	Jul 20, 2023
Priority date	Jul 20, 2023
Publication date	Jan 23, 2025
Grant date	—

Abstract

A defect inspection method, an inspection system, and a non-transitory computer-readable storage medium are provided. The defect inspection method includes providing a processed image and a reference image of a wafer, both the processed image and the reference image comprising a pattern of interest; determining the processed image as a qualified image in response to a matching ratio that reflects a percentage of correctly aligned features of the pattern of interest between the processed image and the reference image is above a first predetermined threshold; selecting a first feature of the qualified image; selecting a second feature of the reference image corresponding to the first feature of the processed image; comparing the qualified image with the reference image to determine a variation of the first feature with respect to the second feature; and detecting a defect of the wafer based on a comparison of the first and second features.

First claim

What is claimed is:

1 . A defect inspection method, comprising:
providing a processed image and a reference image of a wafer, both the processed image and the reference image comprising a pattern of interest; determining the processed image as a qualified image in response to a matching ratio that reflects a percentage of correctly aligned features of the pattern of interest between the processed image and the reference image is above a first predetermined threshold; selecting a first feature of the qualified image; selecting a second feature of the reference image corresponding to the first feature of the processed image; comparing the qualified image with the reference image to determine a variation of the first feature with respect to the second feature; and detecting a defect of the wafer based on a comparison of the first and second features.

2 . The method of claim 1 , wherein the determining of the processed image as the qualified image comprises:
performing a coarse alignment to determine at least one alignment offset between the pattern of interest of the reference image and the pattern of interest of the processed image; performing a fine alignment to search for a matching block of the processed image using the at least one alignment offset determined by the coarse alignment; obtaining the matching ratio of an area of the matching block to an area of the processed image; and determining whether the processed image is the qualified image based on a comparison between the matching ratio and the first predetermined threshold.

3 . The method of claim 2 , wherein the coarse alignment comprises:
expanding the pattern of interest in the processed image to generated an expanded processed image; expanding the pattern of interest in the reference image to generate an expanded reference image; and matching a pattern in the expanded processed image to a pattern in the expanded reference image to determine the alignment offset.

4 . The method of claim 1 , wherein the processed image is identified as the qualified image when the matching ratio is above the first predetermined threshold and a blur index that reflects a blur degree of the processed image is below a second predetermined threshold, and the blur index is obtained by:
maximizing a bright-to-dark ratio of the reference image and the processed image to generate a first image and a second image, respectively; performing a reversing operation on the first image and the second image to generate a third image and a fourth image, respectively; calculating a first ratio of at least one bright region of the first image to at least one dark region of the third image; calculating a second ratio of at least one bright region of the second image to at least one dark region of the fourth image; and obtaining the blur index by calculating a difference between the first and second ratios.

5 . The method of claim 4 , wherein the method is terminated when the first matching ratio is equal to or below the first predetermined threshold and the blur index is equal to or above the second predetermined threshold.

6 . The method of claim 1 , wherein if the pattern comprises a contact-hole pattern, the acquiring of the processed image comprises:
acquiring inspection images of the pattern of interest from different azimuthal angles at a same height; generating a merged image of the pattern of interest by aligning and merging the inspection images; and performing a quality-enhancing operation on the merged image to generate the processed image.

7 . The method of claim 6 , wherein the quality-enhancing operation comprises:
performing a contrast-reversing operation on the merged image; performing a brightness-adjusting operation on the merged image subsequent to the contrast-reversal operation; and performing an image-filtering operation on the merged image after the brightness-adjusting operation to generate the processed image.

8 . The method of claim 1 , wherein if the pattern of interest comprises a line-and-space pattern, the acquiring of the processed image comprises:
acquiring a plurality of first inspection images and a second inspection image associated with the pattern of interest, wherein the first inspection images are captured from different azimuthal angles, and each of the first inspection images and the second inspection image are captured from different elevation angles with respect to the wafer; merging the first inspection images and the second inspection image to generate the merged image; and performing a brightness-adjusting operation and an image-filtering operation on the second merged image to provide the processed image.

9 . The method of claim 7 , wherein each of the first inspection images has a contribution rate of about 1.0 in the merged image, and the second inspection image has a contribution rate of about 0.6 in the merged image.

10 . The method of claim 1 , further comprising determining the defect as systematic random defects or random defects.

11 . An inspection system, comprising:
an energy source configured to cause an energy beam to be directed to a wafer; a plurality first detectors configured to detect the energy beam scattered from the wafer and to generate a plurality of inspection images in response to the detected energy beam, wherein the plurality of first detectors are positioned at different azimuthal angles; and a processor electrically coupled to the plurality of first detector and configured to:
merge the plurality of inspection images to generate a merged image;
enhance quality of the merged image to generate a processed image;
determine whether the processed image is qualified using a reference image; and
find defects of a qualified image in response to determining that the processed image is qualified.

12 . The system of claim 11 , wherein the processor is configured to determine the processed image as a qualified image when a matching ratio that reflects a percentage of correctly aligned features between the processed image and the reference image is above a first predetermined threshold.

13 . The system of claim 11 , wherein the reference image is generated by the plurality of first detectors and is processed by the processor.

14 . The system of claim 11 , further comprising a second detector coupled to the processor and configured to generate a second inspection image, wherein the first and second detectors are arranged at different evaluation angles with respect to the wafer.

15 . A non-transitory computer-readable storage medium, comprising instructions which, when executed by a processor, perform the steps of:
receiving a plurality of first inspection images comprising a pattern of interest formed on a wafer; merging the first inspection images to generate a merged image; performing a quality-enhancing operation on the merged image to generate a processed image; determining the processed image as a qualified image when a matching ratio that reflects a fraction of correctly aligned features between the processed image and a reference image is above a first predetermined threshold; selecting a first feature within the qualified image; selecting a second feature within the reference image corresponding to the first feature of the processed image; comparing the qualified image with the reference image to determine a variation in the first feature with respect to the second feature; and detecting defects on the wafer based on the comparing of the first and second features.

16 . The non-transitory computer-readable storage

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Shao-Chien
• Lin Ting-Han
• Lin Ching-Yi
• Chen To-Yu

Classifications

• G06T2207/10061

  from scanning electron microscope · CPC title

• G06T7/001

  using an image reference approach · CPC title

• G01N21/95607 Primary

  using a comparative method · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N2021/8887

  based on image processing techniques · CPC title