3d volume inspection of semiconductor wafers with increased throughput and accuracy

Patent metadata

Field	Value
Publication number	US-2025022680-A1
Application number	US-202418904899-A
Country	US
Kind code	A1
Filing date	Oct 2, 2024
Priority date	Apr 7, 2022
Publication date	Jan 16, 2025
Grant date	—

Abstract

A system and a method for volume inspection of semiconductor wafers are configured for milling and fast image acquisition of cross-sections surfaces in an inspection volume. High quality images can be obtained by restriction of the imaging to regions of interest or by averaging over several fast image scans. The method and device can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.

First claim

What is claimed is:

1 . A method of inspecting a 3D semiconductor object in an inspection volume of a wafer sample, the method comprising:
acquiring a first number of N cross-section images by fast milling and fast image scanning of a plurality of cross-section surfaces through the inspection volume; and forming a second number of M averaged image slices from the first number of N cross-section images by computing moving average values in a predetermined direction of the semiconductor object, wherein the moving average values for each average image slice are computed from a subset of the first number of N cross-section images.

2 . The method of claim 1 , wherein M is less than N.

3 . The method of claim 1 , wherein a ration of M to N is less than or equal to 0.95.

4 . The method of claim 1 , comprising fast milling of a new cross-section surface and fast image scanning to acquire a cross-section image at different times.

5 . The method of claim 1 , comprising performing the fast milling of a new cross-section surface and the fast image scanning to acquire a cross-section image at the same time using a scanning direction of a charged particle imaging beam which is perpendicular to a direction of a focused ion beam, wherein a cross-section image comprises a first area corresponding to a first cross-section surface before an actual fast milling operation, and a second area corresponding to a second, deeper cross-section surface according to the actual fast milling operation.

6 . The method of claim 1 , wherein the semiconductor object comprises an HAR channel with the predetermined direction perpendicular to a top surface of the wafer sample.

7 . The method of claim 1 , comprising performing the fast milling at an angle of at most 45° relative to a top surface of the sample.

8 . The method of claim 1 , comprising computing of moving average values over the second number of cross section images by convolution of the cross-section images with a one-dimensional convolution kernel parallel to the predetermined direction.

9 . The method according to claim 8 , wherein the one-dimensional convolution kernel extends over at least 3 consecutive cross section images, and the one-dimensional convolution kernel comprises a form selected from the group consisting of a weighted sum, a rect function, and a gaussian distribution function.

10 . The method of claim 1 , comprising, during the computing of moving average values, compensating a lateral drift of a cross-section image of the plurality of cross section images, wherein the lateral drift direction is perpendicular to the predetermined direction.

11 . The method of claim 1 , further comprising adjusting a distance between two adjacent cross-section surfaces according to prior information of the semiconductor object within a volume of interest.

12 . The method of claim 1 , further comprising adjusting a milling angle of a subsequently milled cross-section surface according to prior information of the semiconductor object within a volume of interest.

13 . The method of claim 1 , further comprising changing a detection mode between subsequent fast image scans, wherein a change of a detection mode comprises at least member selected from the group consisting of a change of a dynamic range, a change of an energy range of interaction products, and a change of a type of interaction products.

14 . One or more machine-readable hardware storage devices comprising instructions that are executable by one or more processing devices to perform operations comprising the method of claim 1 .

15 . A system, comprising:
one or more processing devices; and one or more machine-readable hardware storage devices comprising instructions that are executable by one or more processing devices to perform operations comprising the method of claim 1 .

16 . The system of claim 14 , further comprising:
a wafer sample stage for holding and positioning a wafer sample; and a dual column microscope comprising a first beam column and a second beam column, wherein the first and second beam columns define a common intersection point of an optical axis of the FIB column and an optical axis of the charged particle beam imaging column.

17 . The system of claim 15 , wherein the first column comprises a focused ion beam column, and the second column comprises a charged particle beam imaging column.

18 . A method of inspecting a 3D semiconductor object in an inspection volume of a wafer sample, the method comprising:
defining a first volume of interest within an inspection volume of a semiconductor wafer; milling a plurality of cross section surfaces through the inspection volume; and acquiring a number of cross section image segments by performing image scanning operations of cross-section surface segments withing the first volume of interest, wherein each cross section image segment is determined according to regions of interest formed by the intersection of a cross-section surface with the volume of interest.

19 . A method of inspecting a 3D semiconductor object in an inspection volume of a wafer sample, the comprising:
milling a plurality of cross section surfaces through the inspection volume; selecting a plurality of sparse regions for each cross-section surface; acquiring a plurality of sparse cross-section image segments by performing image scanning operations of the plurality of sparse regions of each cross-section surface; and generating a 3D volume image of the inspection volume from the plurality of sparse cross section image segments.

20 . A method of inspecting an inspection volume a 3D semiconductor object of a wafer sample, the comprising:
milling a plurality of cross-section surfaces through the inspection volume; scanning each cross-section surface with an imaging charged particle beam, thereby generating interaction products comprising at least two members selected from the group consisting of secondary electrons, backscattered charged particles, photons, and x-rays in different energy ranges; and forming a plurality of cross-section images from detection signals of at least two different interaction products.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Klochkov Dmitry
• Persch Johannes
• Korb Thomas
• Buxbaum Alex
• Pichumani Ramani
• Foca Eugen
• Neumann Jens Timo

Classifications

• H01J2237/31749

  Focused ion beam · CPC title

• H01J37/3056 Primary

  for microworking, e. g. etching of gratings or trimming of electrical components · CPC title

• H01J2237/2817

  Pattern inspection · CPC title

• H01J2237/2803

  characterised by the imaging method · CPC title

• H01J2237/24592

  Inspection and quality control of devices · CPC title