Chip package and method of forming a chip package

Patent metadata

Field	Value
Publication number	US-2024371796-A1
Application number	US-202418774379-A
Country	US
Kind code	A1
Filing date	Jul 16, 2024
Priority date	May 29, 2020
Publication date	Nov 7, 2024
Grant date	—

Abstract

A chip package is provided. The chip package may include at least one chip, an exposed metal region and a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation. The protection layer structure includes a low-temperature deposited oxide, and a hydrothermally converted metal oxide layer over the protection layer structure.

First claim

1 . A method of manufacturing a chip package, comprising:
providing a chip; forming an exposed metal region and a non-metal region on the chip; forming a metal protection layer structure over the exposed metal region and the non-metal region, the metal protection layer structure comprising a low-temperature deposited oxide; and forming a hydrothermally converted metal oxide layer over the protection layer structure.

2 . The method according to claim 1 ,
wherein the low-temperature deposited oxide comprises a metal oxide.

3 . The method according to claim 1 ,
wherein the hydrothermally converted metal oxide layer comprises an aluminum hydroxide layer.

4 . The method of claim 1 , comprising:
forming an aluminum oxide layer between the metal protection layer structure and the hydrothermally converted metal oxide layer.

5 . The method according to claim 1 ,
wherein the metal protection layer structure comprises a top layer comprising at least one of a group of materials, the group consisting of:
silicon dioxide;
titanium dioxide;
zinc oxide;
hafnium dioxide;
tantalum pentoxide; and
zirconium dioxide.

6 . The method according claim 5 ,
wherein the metal protection layer structure comprises an aluminum oxide layer between the top layer and the exposed metal region.

7 . The method according to claim 1 ,
wherein the metal protection layer structure comprises aluminum oxide with a top layer of doped aluminum oxide.

8 . The method according to claim 1 ,
wherein the exposed metal region comprises at least one of a group of metal regions, the group consisting of:
a chip pad;
a leadframe;
a wire bond;
a clip; and
a stripe bond.

9 . The method according to claim 1 ,
wherein the exposed metal region comprises at least one of a group of materials, the group consisting of:
copper (Cu);
nickel (Ni);
nickel-phosphorus (NiP);
aluminum (Al);
gold (Au);
silver (Ag);
palladium (Pd); and
alloys thereof, for example PdAuAg.

10 . The method according to claim 1 , further comprising:
attaching an encapsulation material to at least a portion of the exposed metal region.

11 . The method according to claim 10 , further comprising:
providing a non-metal layer; and further attaching the encapsulation material to at least a portion of the non-metal layer.

12 . A method of manufacturing a chip package, comprising:
providing at least one chip positioned on a leadframe surface; forming an exposed metal region and a non-metal region on a surface of the at least one chip; forming a metal protection layer structure over the exposed metal region and non-metal region, the protection layer structure comprising a metal oxide; and forming a hydrothermally converted metal oxide layer over the protection layer structure.

13 . The method of claim 12 ,
wherein the metal oxide comprises an aluminum oxide.

14 . The method of claim 12 ,
where the hydrothermally converted metal oxide layer comprises an aluminum hydroxide layer.

15 . The method of claim 12 , where the metal protection layer structure comprises a multilayer formed by a plurality of single layers.

16 . The method of claim 15 , where one or more of the plurality of single layers are made of different material.

17 . The method of claim 12 , where the metal protection layer structure is an adhesion layer structure.

18 . The method of claim 12 , where the metal protection layer structure includes a moisture resistant doped region that is doped with silicon.

19 . The method of claim 12 , further comprising:
an encapsulation material attached to at least a portion of the exposed metal region and the non-metal region by the metal protection layer structure and the hydrothermally converted metal oxide layer.

20 . The method of claim 12 , where the metal protection layer structure and the hydrothermally converted metal oxide layer extend directly over the leadframe surface.

Assignees

• Infineon Technologies Ag

Inventors

• Sax Harry Walter
• Gatterbauer Johann
• Lehnert Wolfgang
• Napetschnig Evelyn
• Rogalli Michael

Classifications

• H10W72/953

  not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/019

  of bond pads · CPC title

• H10W74/127

  characterised by arrangements for sealing or adhesion · CPC title

• H10W74/01

  Manufacture or treatment · CPC title