Multifunctional wafer pretreatment chamber and chemical vapor deposition device
US-2024337011-A1 · Oct 10, 2024 · US
US2024254629A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024254629-A1 |
| Application number | US-202418631858-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 10, 2024 |
| Priority date | Dec 28, 2021 |
| Publication date | Aug 1, 2024 |
| Grant date | — |
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A susceptor assembly includes a heater pedestal and a cap coupled to the heater pedestal. The cap can include one or mor through holes to facilitate purging and/or reduce dead volumes associated with the susceptor assemblies. Reactor systems including such assemblies are also disclosed.
Opening claim text (preview).
What is claimed is: 1 . A susceptor assembly comprising: a heater pedestal; and a cap coupled to the heater pedestal, the cap comprising a body comprising a top surface and a bottom surface, wherein the bottom surface comprises a recess to receive a top portion of the heater pedestal, and wherein the cap comprises one or more holes radially exterior the recess, the one or more holes extending from the top surface to the bottom surface. 2 . The susceptor assembly of claim 1 , wherein the top surface comprises a substrate recess to receive a substrate. 3 . The susceptor assembly of claim 1 , further comprising a seal, wherein the top surface comprises a seal recess to receive the seal. 4 . The susceptor assembly of claim 3 , wherein the seal comprises metal. 5 . The susceptor assembly of claim 3 , wherein the one or more holes are radially inward the seal recess. 6 . The susceptor assembly of claim 1 , wherein the cap comprises between 12 and 72 holes. 7 . The susceptor assembly of claim 1 , wherein a diameter of each of the one or more holes is not less than 0.5 mm and not greater than 1.5 mm. 8 . The susceptor assembly of claim 1 , wherein the cap further comprises one or more vacuum chuck grooves within the body. 9 . The susceptor assembly of claim 1 , wherein the cap comprises a purge gas channel within the body and extending laterally. 10 . The susceptor assembly of claim 9 , wherein the heater pedestal comprises a purge gas hole. 11 . The susceptor assembly of claim 1 , wherein the cap comprises an inner region and an outer region, wherein a height of the inner region is greater than a height of the outer region. 12 . The susceptor assembly of claim 11 , wherein the one or more holes are located within the outer region. 13 . An assembly comprising: a heater pedestal; a cap coupled to the heater pedestal, the cap comprising a body comprising a top surface, a bottom surface, an inner region, an outer region, and one or more holes extending from the top surface to the bottom surface in the outer region; a flow control ring; and a seal between the flow control ring and the outer region. 14 . The assembly of claim 13 , wherein the outer region comprises a seal recess to receive a portion of the seal. 15 . The assembly of claim 14 , wherein the one or more holes are radially inward the seal recess. 16 . The assembly of claim 13 , wherein the seal comprises metal. 17 . The assembly of claim 13 , wherein the cap comprises a purge gas channel within the body and extending laterally. 18 . The assembly of claim 17 , wherein the heater pedestal comprises a purge gas hole. 19 . The assembly of claim 13 , wherein a height of the inner region is greater than a height of the outer region. 20 . A reactor system comprising: a reaction chamber; and a susceptor assembly within the reaction chamber, the susceptor assembly comprising: a heater pedestal; and a cap coupled to the heater pedestal, the cap comprising a body comprising a top surface and a bottom surface, wherein the bottom surface comprises a recess to receive a top portion of the heater pedestal, and wherein the cap comprises one or more holes radially exterior the recess, the one or more holes extending from the top surface to the bottom surface.
Nozzles for more than one gas · CPC title
Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds · CPC title
by purging residual gases from the reaction chamber or gas lines · CPC title
Elements in the interior of the support, e.g. electrodes, heating or cooling devices · CPC title
characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title
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