Process for hysteretic current-voltage mediated void-free superconformal and bottom-up filling

Patent metadata

Field	Value
Publication number	US-2024229282-A1
Application number	US-202218558324-A
Country	US
Kind code	A1
Filing date	May 12, 2022
Priority date	May 12, 2021
Publication date	Jul 11, 2024
Grant date	—

Abstract

Hysteretic current-voltage mediated void-free superconformal and bottom-up filling of recessed features includes providing an electrodeposition composition with a hysteretic cyclic voltammogram; providing the substrate controlling applied electric potential; autonomously reducing the deposition potential of the recess; bifurcating the recess; forming a transition zone and moving the transition zone through the metal deposition; and reducing metal ions to form metal; and forming a resistance enhanced superconformal filling in the recess from the metal, such that forming the resistance enhanced superconformal filling occurs in consequence of autonomously reducing the deposition potential of the recess.

First claim

What is claimed is:

1 . A process for performing hysteretic current-voltage mediated void-free superconformal and bottom-up filling of recessed features of a substrate with a resistance member, the process comprising:
providing an electrodeposition composition comprising:
a metal electrolyte comprising a plurality of metal ions and a solvent; and
a suppressor disposed in the solvent; and
a hysteretic cyclic voltammogram;
providing the substrate comprising:
a field surface; and
a recess disposed in the substrate, the recess comprising a distal position and a proximate position relative to the field surface of the substrate;
exposing the recess to the electrodeposition composition; potentiostatically or potentiodynamically controlling an applied electric potential of the recess with a potential wave form; autonomously reducing, with the resistance member in presence of the electrodeposition composition with the hysteretic cyclic voltammogram, the deposition potential of the recess from that applied by the potential waveform; bifurcating the recess into an active metal deposition region and a passive region in response to the deposition potential and ohmic variations of the substrate; forming, in response to bifurcating the recess, a transition zone at an interface of the active metal deposition region and the passive region; progressively moving the transition zone closer to the field surface and away from the distal position through the metal deposition; and reducing the metal ions to form metal and depositing the metal in the active metal deposition region and not in the passive region; and forming a resistance enhanced superconformal filling in the recess of the substrate from the metal in the active metal deposition region, the resistance enhanced superconformal filling being:
void-free,
disposed in the recess in the active metal deposition region from the distal position to the transition zone, and
absent in the passive region between the proximate position and the transition zone,
such that forming the resistance enhanced superconformal filling occurs in consequence of autonomously reducing the deposition potential of the recess with the resistance member in a presence of the hysteretic cyclic voltammogram of the electrodeposition composition.

2 . The process of claim 1 , wherein the resistance member is selected from the group consisting essentially of a lumped resistor, a baffle, and a selected interelectrode separation distance between the substrate and a reference electrode in electrical communication with the electrodeposition composition.

3 . The process of claim 2 , wherein the resistance member is the lumped resistor, and the lumped resistor comprises a resistor in electrical communication with and electrically interposed between the substrate and a counter electrode in electrical communication with the electrodeposition composition.

4 . The process of claim 2 , wherein the resistance member is the baffle, and the baffle is in fluid communication with and fluidically interposed between the substrate and the reference electrode.

5 . The process of claim 1 , wherein the resistance member is the selected interelectrode separation distance between the substrate and a reference electrode in electrical communication with the electrodeposition composition, and the process further comprises adjusting the interelectrode separation.

6 . The process of claim 1 , further comprising terminating the depositing the metal before completely filling the recess to the field surface.

7 . The process of claim 1 , further comprising terminating depositing the metal after completely filling the recess to the field surface.

8 . The process of claim 1 , wherein the hysteretic cyclic voltammogram comprises an S-shaped negative differential resistance.

9 . The process of claim 1 , wherein the metal ions comprise Fe 2+ , Fe 3+ , Pt 2+ , Pt 4+ , Ir 3+ , Ir 4+ , Rh 3+ , Pd 2+ , Co 2+ , N i 2+ , Au 3+ , Zn 2+ , Bi 3+ , Pb 2+ , Re 7+ , Au + , Ag + , Sn 2+ , W + , Mo 6+ , Cu 2+ , Cu + , or a combination comprising at least one of the foregoing metal ions, and
the metal comprises cobalt, gold, nickel, iron, silver, platinum, iridium, rhodium, palladium, rhenium, tungsten, molybdenum, tin, bismuth, zinc, lead, copper or a combination comprising at least one of the foregoing metals.

10 . The process of claim 1 , wherein the electrodeposition composition further comprises anions for the metal ions, the anions comprising sulfate, chloride, sulfite, perchlorate, bromide, citrate, tartrate, ethylenediamine, ethylenediaminetetracetic acid, or a combination comprising at least one of the foregoing anions.

11 . The process of claim 1 , wherein the suppressor comprises a polyether; a polyethylene oxide; a polyethylene glycol; a poloxamer; a poloxamine; alkylammonium cations, or a combination comprising at least one of the foregoing suppressors.

12 . The process of claim 1 , wherein the electrodeposition composition further comprises a leveler comprising an amine, a polyethyleneimine, a phenolphthalein, or alkylammonium cations; or a combination comprising at least one of the foregoing levelers.

13 . The process of claim 1 , wherein the electrodeposition composition further comprises chloride, bromide, or iodide.

14 . The process of claim 1 , wherein the recess comprises:
a depth from the field surface to the distal position that is from 10 nm to 900 μm, and an aspect ratio from 1 to 70.

15 . The process of claim 1 , wherein the recess comprises a through hole, a blind hole, or a combination comprising at least one of the foregoing recesses.

16 . The process of claim 1 , wherein the potential wave form comprises a single fixed applied potential.

17 . A system for performing hysteretic current-voltage mediated void-free superconformal and bottom-up filling of recessed features of a substrate with a resistance member, the system comprising:
a cell; an electrodeposition composition disposed in the cell and comprising:
a metal electrolyte comprising a plurality of metal ions and a solvent; and
a suppressor disposed in the solvent; and
a hysteretic cyclic voltammogram;
the substrate disposed in the cell in fluid communication with the electrodeposition composition and comprising:
a field surface; and
a recess disposed in the substrate, the recess comprising a distal position and a proximate position relative to the field surface of the substrate, such the recess is in contact with the electrodeposition composition,
such that an applied electric potential of the recess is under potentiostatically or potentiodynamically control with a potential wave form;
the resistance member in communication with the electrodeposition composition and the substrate, wherein the system is arranged and configured such that the resistance member in presence of the electrodeposition composition with the hysteretic cyclic voltammogram:
autonomously reduces the deposition potential of the recess from that applied by the potential waveform, such that the recess is bifurcated into an active metal deposition region and a passive region in response to the deposition potential and ohmic variations of the substrate; whereby, in response to bifurcating the recess, a transition zone is formed at an interface of the active metal deposition region and the passive region, such that the transition zone progressively moves closer to the field surface and away from the distal position through the metal deposition to reduce the metal ions and form metal to deposit the metal

Assignees

• Government Of The Us Secretary Of Commerce

Inventors

• Braun Trevor Michael
• Moffat Thomas Polk
• Josell Daniel

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10W20/2125

  Top-view shapes · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title