Chemical vapor deposition reactor with preheating, reaction, and cooling zones
US-2017275760-A1 · Sep 28, 2017 · US
Method for producing gallium precursor and method for producing laminated body using the same
US2024102159A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024102159-A1 |
| Application number | US-202017766467-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 15, 2020 |
| Priority date | Oct 24, 2019 |
| Publication date | Mar 28, 2024 |
| Grant date | — |
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Abstract
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A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.
First claim
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1 - 7 . (canceled) 8 . A method for producing a gallium precursor comprising: a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. 9 . The method for producing a gallium precursor according to claim 8 , wherein the step of making the gallium fine is to make the gallium fine by ultrasonic vibration. 10 . The method for producing a gallium precursor according to claim 8 , further comprising liquefying the gallium before the step of making the gallium fine. 11 . The method for producing a gallium precursor according to claim 9 , further comprising liquefying the gallium before the step of making the gallium fine. 12 . The method for producing a gallium precursor according to claim 8 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 13 . The method for producing a gallium precursor according to claim 9 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 14 . The method for producing a gallium precursor according to claim 10 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 15 . The method for producing a gallium precursor according to claim 11 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 16 . The method for producing a gallium precursor according to claim 8 , wherein hydrogen halide is used as the acid. 17 . The method for producing a gallium precursor according to claim 9 , wherein hydrogen halide is used as the acid. 18 . The method for producing a gallium precursor according to claim 10 , wherein hydrogen halide is used as the acid. 19 . The method for producing a gallium precursor according to claim 11 , wherein hydrogen halide is used as the acid. 20 . The method for producing a gallium precursor according to claim 8 , wherein ammonia is used as the alkali. 21 . The method for producing a gallium precursor according to claim 9 , wherein ammonia is used as the alkali. 22 . The method for producing a gallium precursor according to claim 10 , wherein ammonia is used as the alkali. 23 . The method for producing a gallium precursor according to claim 11 , wherein ammonia is used as the alkali. 24 . A method for producing a laminated body containing a film containing gallium comprising: a step of heating a substrate, a step of further diluting the gallium precursor prepared by the method according to claim 8 with water to prepare a gallium precursor solution, a step of atomizing the gallium precursor solution, a step of supplying the atomized gallium precursor solution to the substrate with a carrier gas, and a step of forming a film containing gallium on the substrate by reacting the atomized gallium precursor solution on the substrate.
Assignees
Inventors
Classifications
- C23C16/4486Primary
by producing an aerosol and subsequent evaporation of the droplets or particles · CPC title
- C01G15/00Primary
Compounds of gallium, indium or thallium · CPC title
Oxides · CPC title
Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title
- C30B29/16Primary
Oxides · CPC title
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- What does patent US2024102159A1 cover?
- A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification C23C16/4486. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Mar 28 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).