Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium

Patent metadata

Field	Value
Publication number	US-9343295-B2
Application number	US-201414281242-A
Country	US
Kind code	B2
Filing date	May 19, 2014
Priority date	Sep 18, 2007
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.

First claim

What is claimed is:

1. A film forming method comprising:
generating gas bubbles having a diameter of 1000 nm or less and charged positively or negatively in a liquid material by blowing a first carrier gas into the liquid material in a first unit;
transporting the liquid material laden with the gas bubbles from the first unit to a second unit through a liquid material line;
producing a mist from the liquid material laden with the gas bubbles by atomizing the liquid material laden with the gas bubbles by a second carrier gas through the use of the second unit;
obtaining a gas material by heating and vaporizing the mist; and
performing a film forming process on a target object in a processing chamber by supplying the gas material to the target object,
wherein the first unit and the second unit are spatially separated from each other.

2. The film forming method of claim 1 , wherein said generating the gas bubbles includes producing a revolving flow of the liquid material.

3. The film forming method of claim 1 , wherein the second unit is an atomization nozzle.

4. The film forming method of claim 3 , wherein the second carrier gas is supplied through a carrier gas flow path surrounding a flow path through which the liquid material laden with the gas bubbles flows, the carrier gas flow path having, at a leading end portion of the atomization nozzle, a rapidly decreasing outer diameter.

5. The film forming method of claim 1 , wherein said producing the mist includes transferring charges of the gas bubbles to the mist while the liquid material laden with the gas bubbles is atomized.

6. The film forming method of claim 1 , wherein the first unit is a nano bubble generation device and the second unit is an atomization nozzle.

Assignees

• Tokyo Electron Ltd

Inventors

• Sawada Ikuo
• Nagaseki Sumie
• Ikeda Kyoko
• Ohshita Tatsuro

Classifications

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6334 Primary

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H01L21/02271 Primary

  Electricity · mapped topic

• H01L21/02181

  Electricity · mapped topic

• C23C16/4486 Primary

  by producing an aerosol and subsequent evaporation of the droplets or particles · CPC title