Method for correcting lithography pattern of surface plasma

Patent metadata

Field	Value
Publication number	US-2024077799-A1
Application number	US-202118262035-A
Country	US
Kind code	A1
Filing date	Nov 2, 2021
Priority date	Nov 2, 2021
Publication date	Mar 7, 2024
Grant date	—

Abstract

Provided is a method for correcting a lithography pattern of a surface plasma, including: forming a plurality of test patterns on a test mask; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns; establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern; processing the first data table according to the first exposure parameter to obtain a second data table; and respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns.

First claim

1 . A method for correcting a lithography pattern of a surface plasma, comprising:
forming a plurality of test patterns on a test mask, each of the test patterns being characterized by at least a first test parameter and a second test parameter associated with the first test parameter; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns, each of the photoresist patterns being characterized by at least a first exposure parameter and a second exposure parameter associated with the first exposure parameter; establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern; processing the first data table according to the first exposure parameter to obtain a second data table; and respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns.

2 . The method according to claim 1 , wherein at least two test patterns of the plurality of test patterns have a same first test parameter.

3 . The method according to claim 1 , wherein the first test parameter is an arrangement period of a line of the test pattern, and the second test parameter is a line width of a line of the test pattern or a spacing between two lines of the test pattern;
the first exposure parameter is an arrangement period of a line of the photoresist pattern, and the second exposure parameter is a line width of a line of the photoresist pattern or a spacing between two lines of the photoresist pattern.

4 . The method according to claim 1 , wherein the first exposure parameter of each photoresist pattern is the same as a first test parameter of a test pattern corresponding to the photoresist pattern.

5 . The method according to claim 4 , wherein the processing the first data table according to the first exposure parameter to obtain a second data table comprises:
sequentially selecting each test pattern as a target pattern, and searching the first data table for at least two first exposure parameters, wherein the at least two first exposure parameters are the same as a first test parameter of the target pattern; acquiring second exposure parameters associated with the at least two first exposure parameters; selecting a second exposure parameter closest to a second test parameter of the target pattern from all associated second exposure parameters as a preferred second exposure parameter; searching the first data table for a preferred second test parameter, wherein the preferred second test parameter corresponds to a first test parameter same as the first test parameter of the target pattern and corresponds to the preferred second exposure parameter; and establishing the second data table based on the first test parameter, the second test parameter and the preferred second test parameter of all target patterns.

6 . The method according to claim 5 , wherein the respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns and manufacturing a mask for exposure by using the corrected design patterns comprises:
correcting the second test parameter of each design pattern in the second data table to the preferred second test parameter, so as to obtain the corrected design pattern, and manufacturing the mask for exposure by using the corrected design pattern.

7 . The method according to claim 3 , wherein the plurality of the test patterns are arranged into a one-dimensional periodic test pattern.

8 . The method according to claim 7 , wherein the one-dimensional period test pattern comprises: a horizontal line periodic pattern or a vertical line periodic pattern.

9 . The method according to claim 8 , wherein, in the horizontal line period pattern or the vertical line period pattern, an arrangement period of a line is equal to a sum of a line width of the line and a spacing between lines.

10 . The method according to claim 1 , wherein the exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns, each of the photoresist patterns being characterized by at least a first exposure parameter and a second exposure parameter associated with the first exposure parameter comprises:
exposing the photoresist layer three times by using the test mask containing the test patterns, wherein each exposure forms a plurality of photoresist patterns, and each test pattern of the plurality of test patterns respectively forms three photoresist patterns after three exposures; and taking an average value of first exposure parameters and an average value of second exposure parameters of the three photoresist patterns as a first exposure parameter and a second exposure parameter of a photoresist pattern corresponding to the test pattern.

Assignees

• Inst Of Microelectronics Cas

Inventors

• Ma Le
• Wei Yayi
• Zhang Libin
• He Jianfang

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F1/44 Primary

  Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales · CPC title

• G03F1/72

  Repair or correction of mask defects · CPC title

• G03F7/20 Primary

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F1/36

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title